Low-frequency Raman active modes of twisted bilayer MoS2

被引:0
作者
Klein, Brandon [1 ,2 ]
Liang, Liangbo [3 ]
Meunier, Vincent [1 ,4 ]
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[2] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[4] Univ Penn, Dept Engn Sci & Mech, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
Phonons; Raman; MoS2; Twisted bilayer; calculations; SCATTERING; WS2;
D O I
10.1088/1361-648X/ad5093
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the low-frequency Raman active modes of twisted bilayer MoS2 for several twist angles using a force-field approach and a parametrized bond polarizability model. We show that twist angles near high-symmetry stacking configurations exhibit stacking frustration that leads to significant buckling of the moir & eacute; superlattice. We find that atomic relaxation due to the twist is of prime importance. The periodic displacement of the Mo atoms shows the realization of a soliton network, and in turn, leads to the emergence of a number of frequency modes not seen in the high-symmetry stacking systems. Some of the modes are only seen in the XZ Raman polarization setup while others are seen in the XY setup. The symmetry of the normal modes, and how this affects the Raman tensors is examined in detail.
引用
收藏
页数:10
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