Low-frequency Raman active modes of twisted bilayer MoS2

被引：0

作者：

Klein, Brandon ^{[1
,2
]}

Liang, Liangbo ^{[3
]}

Meunier, Vincent ^{[1
,4
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA

[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[4] Univ Penn, Dept Engn Sci & Mech, University Pk, PA 16802 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2024年 / 36卷 / 36期

基金：

美国国家科学基金会;

关键词：

Phonons; Raman; MoS2; Twisted bilayer; calculations; SCATTERING; WS2;

D O I：

10.1088/1361-648X/ad5093

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the low-frequency Raman active modes of twisted bilayer MoS2 for several twist angles using a force-field approach and a parametrized bond polarizability model. We show that twist angles near high-symmetry stacking configurations exhibit stacking frustration that leads to significant buckling of the moir & eacute; superlattice. We find that atomic relaxation due to the twist is of prime importance. The periodic displacement of the Mo atoms shows the realization of a soliton network, and in turn, leads to the emergence of a number of frequency modes not seen in the high-symmetry stacking systems. Some of the modes are only seen in the XZ Raman polarization setup while others are seen in the XY setup. The symmetry of the normal modes, and how this affects the Raman tensors is examined in detail.

引用

页数：10

共 38 条

[21]

Liu JZ, 2019, NAT CHEM, V11, P71, DOI 10.1038/s41557-018-0156-y

[22] Folded MoS2 bilayers with variable interfacial coupling revealed by Raman and Photoluminescence spectroscopy [J].

Liu, Yi ;

Wang, Shaozhi ;

Chen, Xue ;

Yang, Mingming ;

Li, Xiaoli ;

Liang, Baolai .

OPTICAL MATERIALS, 2021, 111

[23] Phonons in twisted transition-metal dichalcogenide bilayers: Ultrasoft phasons and a transition from a superlubric to a pinned phase [J].

Maity, Indrajit ;

Naik, Mit H. ;

Maiti, Prabal K. ;

Krishnamurthy, H. R. ;

Jain, Manish .

PHYSICAL REVIEW RESEARCH, 2020, 2 (01)

[24] Atomically Thin MoS2: A New Direct-Gap Semiconductor [J].

Mak, Kin Fai ;

Lee, Changgu ;

Hone, James ;

Shan, Jie ;

Heinz, Tony F. .

PHYSICAL REVIEW LETTERS, 2010, 105 (13)

[25] Kolmogorov-Crespi Potential For Multilayer Transition-Metal Dichalcogenides: Capturing Structural Transformations in Moire Superlattices [J].

Naik, Mit H. ;

Maity, Indrajit ;

Maiti, Prabal K. ;

Jain, Manish .

JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (15) :9770-9778

[26] Electric field effect in atomically thin carbon films [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Zhang, Y ;

Dubonos, SV ;

Grigorieva, IV ;

Firsov, AA .

SCIENCE, 2004, 306 (5696) :666-669

[27] Electrical tuning of optically active interlayer excitons in bilayer MoS2 [J].

Peimyoo, Namphung ;

Deilmann, Thorsten ;

Withers, Freddie ;

Escolar, Janire ;

Nutting, Darren ;

Taniguchi, Takashi ;

Watanabe, Kenji ;

Taghizadeh, Alireza ;

Craciun, Monica Felicia ;

Thygesen, Kristian Sommer ;

Russo, Saverio .

NATURE NANOTECHNOLOGY, 2021, 16 (08) :888-+

[28]

Placzek G., 1959, Therayleigh Andraman Scattering

[29] Variable angle spectroscopic ellipsometry characterization of spin-coated MoS2 films [J].

Politano, Grazia Giuseppina ;

Castriota, Marco ;

De Santo, Maria Penelope ;

Pipita, Mario Michele ;

Desiderio, Giovanni ;

Vena, Carlo ;

Versace, Carlo .

VACUUM, 2021, 189

[30]

Quan JM, 2021, NAT MATER, V20, P1100, DOI 10.1038/s41563-021-00960-1

← 1 2 3 4 →