Technical Trends of SiC Power Semiconductor Devices and Their Applications in Power Electronics

被引:7
作者
Fujishima, Naoto [1 ]
机构
[1] Fuji Elect Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 3900821, Japan
关键词
power device; MOSFET; power electronics; renewable energy; electrified vehicle;
D O I
10.1541/ieejjia.23005497
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
J -STAGE Advance published date : March 15, 2024 Power electronics technologies play important roles in energy conservation and low -carbon goals, whereby power devices, such as silicon IGBTs and SiC-MOSFETs, are key components that support the e ffi cient use of energy by power electronics and are indispensable for power supply and control. This paper provides an overview of market trends for power semiconductor devices, and introduces and focuses on state-of-the-art SiC power devices, such as SiC-MOSFET and SiC-SBD. This paper also reports on the requirements and applications of power electronics equipment that utilizes SiC power devices.
引用
收藏
页码:372 / 378
页数:7
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