Broad-range, high-linearity, and fast-response pressure sensing enabled by nanomechanical resonators based on 2D non-layered material: β-In2S3

被引:6
作者
Zhu, Junzhi [1 ]
Wu, Song [1 ]
Wang, Luming [1 ]
Wu, Jiaqi [1 ]
Zhu, Jiankai [1 ,2 ]
Zou, Luwei [3 ]
Xiao, Fei [1 ]
Su, Ziluo [1 ]
Jiao, Chenyin [1 ]
Pei, Shenghai [1 ]
Zhang, Zejuan [1 ]
Qin, Jiaze [1 ]
Xu, Bo [1 ]
Zhou, Yu [3 ]
Xia, Juan [1 ]
Wang, Zenghui [1 ,4 ]
机构
[1] Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai, Peoples R China
[3] Cent South Univ, Sch Phys, Hunan Key Lab Nanophoton & Devices, Changsha 410083, Peoples R China
[4] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
基金
中国国家自然科学基金;
关键词
2D non-layered materials; frequency scaling; nanomechanical resonators; pressure sensing; ELECTRON; GROWTH;
D O I
10.1002/inf2.12553
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional (2D) non-layered materials, along with their unique surface properties, offer intriguing prospects for sensing applications. Introducing mechanical degrees of freedom is expected to enrich the sensing performances of 2D non-layered devices, such as high frequency, high tunability, and large dynamic range, which could lead to new types of high performance nanosensors. Here, we demonstrate 2D non-layered nanomechanical resonant sensors based on beta-In2S3, where the devices exhibit robust nanomechanical vibrations up to the very high frequency (VHF) band. We show that such device can operate as pressure sensor with broad range (from 10(-3 )Torr to atmospheric pressure), high linearity (with a nonlinearity factor as low as 0.0071), and fast response (with an intrinsic response time less than 1 mu s). We further unveil the frequency scaling law in these beta-In2S3 nanomechanical sensors and successfully extract both the Young's modulus and pretension for the crystal. Our work paves the way towards future wafer-scale design and integrated sensors based on 2D non-layered materials. image
引用
收藏
页数:9
相关论文
共 56 条
[21]   Self-Sealing Complex Oxide Resonators [J].
Lee, Martin ;
Robin, Martin P. ;
Guis, Ruben H. ;
Filippozzi, Ulderico ;
Shin, Dong Hoon ;
van Thiel, Thierry C. ;
Paardekooper, Stijn P. ;
Renshof, Johannes R. ;
van der Zant, Herre S. J. ;
Caviglia, Andrea D. ;
Verbiest, Gerard J. ;
Steeneken, Peter G. .
NANO LETTERS, 2022, 22 (04) :1475-1482
[22]   Sealing Graphene Nanodrums [J].
Lee, Martin ;
Davidovikj, Dejan ;
Sajadi, Banafsheh ;
Siskins, Makars ;
Alijani, Farbod ;
van der Zant, Herre S. J. ;
Steeneken, Peter G. .
NANO LETTERS, 2019, 19 (08) :5313-5318
[23]   β-In2S3 Nanoplates for Ultrafast Photonics [J].
Li, Xiaohui ;
Han, Yueheng ;
Shi, Zhaojiang ;
An, Mingqi ;
Chen, Enci ;
Feng, Jiangjiang ;
Wang, Qi Jie .
ACS APPLIED NANO MATERIALS, 2022, 5 (03) :3229-3236
[24]  
Liang Y., PRESENTED 2021 5 IEE
[25]   Two-Dimensional Inverters Based on MoS2-hBN-Graphene Heterostructures Enabled by a Layer-by-Layer Dry-Transfer Method [J].
Liang, Yachun ;
Zhu, Jiankai ;
Xiao, Fei ;
Xu, Bo ;
Wen, Ting ;
Wu, Song ;
Li, Jing ;
Xia, Juan ;
Wang, Zenghui .
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 :1269-1274
[26]   Toward practical gas sensing with rapid recovery semiconducting carbon nanotube film sensors [J].
Liu, Fangfang ;
Xiao, Mengmeng ;
Ning, Yongkai ;
Zhou, Shaoyuan ;
He, Jianping ;
Lin, Yanxia ;
Zhang, Zhiyong .
SCIENCE CHINA-INFORMATION SCIENCES, 2022, 65 (06)
[27]  
Liu YJ., 2022, ACS APPL MATER INTER, V15, P30479
[28]   Epitaxial growth of large-scale In2S3 nanoflakes and the construction of a high performance In2S3/Si photodetector [J].
Lu, Jianting ;
Zheng, Zhaoqiang ;
Gao, Wei ;
Yao, Jiandong ;
Zhao, Yu ;
Xiao, Ye ;
Wang, Bing ;
Li, Jingbo .
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (39) :12104-12113
[29]   Intrinsic dissipation in high-frequency micromechanical resonators [J].
Mohanty, P ;
Harrington, DA ;
Ekinci, KL ;
Yang, YT ;
Murphy, MJ ;
Roukes, ML .
PHYSICAL REVIEW B, 2002, 66 (08) :854161-8541615
[30]   Dependence of phonon transport properties with stacking thickness in layered ZnO [J].
Peng, Chengxiao ;
Qin, Guangzhao ;
Zhang, Lichuan ;
Zhang, Guangbiao ;
Wang, Chao ;
Yan, Yuli ;
Wang, Yuanxu ;
Hu, Ming .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (31)