Conductivity and response formation of semiconductor gas sensors based on tin dioxide nanomaterials

被引:0
作者
Oleksenko, Luidmila P. [1 ]
Fedorenko, George V. [2 ]
Maksymovych, Nelly P. [1 ]
Vasylenko, Inna V. [2 ]
Ripko, Oleksandr P. [1 ]
Symonenko, Ye O. [1 ]
机构
[1] Taras Shevchenko Natl Univ Kyiv, Dept Chem, Volodymyrska Str 64-13, UA-01601 Kiev, Ukraine
[2] Natl Acad Sci Ukraine, LV Pisarzhevsky Inst Phys Chem, Kiev, Ukraine
关键词
Conductivity; methane sensors; Pt/SnO; response formation model; semiconductor nanomaterials; sol-gel synthesis; SENSING PROPERTIES; HYDROGEN GAS; METHANE; SNO2; CO; SENSITIVITY; OXIDATION; SITES;
D O I
10.1080/15421406.2024.2348173
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Highly sensitive to methane semiconductor sensors were obtained with the use of nanosized tin dioxide synthesized via sol-gel method. Sensitization of the sensors was achieved by introduction of Pt additives into semiconductor gas sensitive materials. Experimental data of dependences of conductivities of the created sensors on methane concentrations were used for approximation by a mathematical model of the sensor conductivity and response formation. The model is based on features of a methane oxidation reaction on the surface of the gas sensitive material and allows to connect conductivity of the sensor with surface processes occurred on its gas sensitive layer.
引用
收藏
页码:9 / 16
页数:8
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