A Testbed for Cryogenic On-wafer Noise Measurement Using Cold Source Method with Temperature-Dependent Loss Correction

被引:0
|
作者
Huang, Guo-Wei [1 ]
Chen, Bo-Yuan [1 ]
Shiao, Yu-Shao [1 ]
Chuang, Chia-Wei [1 ]
Shen, Liang-Chung [1 ]
Chen, Kun-Ming [1 ]
Chiu, Chia-Sung [1 ]
机构
[1] Taiwan Semicond Res Inst, 26 Prosperity Rd 1,Hsinchu Sci Pk, Hsinchu 300091, Taiwan
来源
2024 IEEE 36TH INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, ICMTS 2024 | 2024年
关键词
cold source method; cryogenic noise temperature measurement; cryogenic CMOS; cryogenic InP pHEMT;
D O I
10.1109/ICMTS59902.2024.10520691
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
On-wafer noise measurement at cryogenic temperature is challenging due to complexity of temperature gradient distributions in cryostats. As Keysight Technologies introduce their on-wafer cold source method for stable noise temperature measurement at room temperature, we propose our correct formulas as loss correction to exploit the method to work properly for cryogenic noise temperature measurement, especially as a good fit for those which involve a large number of samples, e.g., Known-Good-Die testing. In this paper, we demonstrate the feasibility of the correction with 16nm, 65nm CMOS, and two InP pHEMT transistors at 4-14GHz. The correction significantly compensates the underestimated noise temperatures by more than 20K. As the results, we suggest that the correction is convenient and more accurate while using the cold source method for cryogenic on-wafer noise temperature measurement.
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页数:4
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