Electric field-effect thermal transistors and logic gates

被引:1
作者
Xu, Deyu [1 ]
Zhao, Junming [1 ,2 ]
Liu, Linhua [3 ]
机构
[1] Harbin Inst Technol, Sch Energy Sci & Engn, Harbin 150001, Peoples R China
[2] Minist Ind & Informat Technol, Key Lab Aerosp Thermophys, Harbin 150001, Peoples R China
[3] Shandong Univ, Sch Energy & Power Engn, Qingdao 266237, Peoples R China
基金
中国国家自然科学基金;
关键词
Thermal transistor; Near -field radiative heat transfer; Field-effect transistor; Semiconductor; HEAT-TRANSFER; TRANSITION; RADIATION;
D O I
10.1016/j.ijheatmasstransfer.2024.125557
中图分类号
O414.1 [热力学];
学科分类号
摘要
A prototype of electric field-effect thermal transistor (EFETT) and the derived thermal logic gates are proposed, using electric potentials as inputs and temperature as outputs. The EFETT works on the modulation of near-field thermal photons transferred between the source and the drain semiconductors by the electric field-effect induced by gate voltage, thus altering the heat current and terminal temperature. It is demonstrated that arbitrary thermal logic gates can be built based on the EFETT conveniently. The characteristics of the EFETTs and the realized thermal logic gates are analyzed quantitatively. The proposed prototype opens a new avenue for the design of thermal transistors and thermal circuits which may motivate their applications for thermal information processing and thermal management.
引用
收藏
页数:8
相关论文
共 50 条
[31]   Assessment of Germanane Field-Effect Transistors for CMOS Technology [J].
Zhao, Yiju ;
AlMutairi, AbdulAziz ;
Yoon, Youngki .
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (12) :1743-1746
[32]   Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors [J].
Hwang, Jongseung ;
Kim, Heetae ;
Lee, Jaehyun ;
Whang, Dongmok ;
Hwang, Sungwoo .
IEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (05) :826-829
[33]   Negative Capacitance for Stabilizing the Logic State in a Tunnel Field-Effect Transistor [J].
Dey, Koushik ;
Das, Bikash ;
Hazra, Pabitra Kumar ;
Kundu, Tanima ;
Naskar, Sanjib ;
Das, Soumik ;
Maity, Sujan ;
Maji, Poulomi ;
Karmakar, Bipul ;
Paramanik, Rahul ;
Datta, Subhadeep .
ACS APPLIED NANO MATERIALS, 2024, 7 (23) :26405-26413
[34]   Tuning Solution Aggregates and Thin Film Polymorphs in Conjugated Polymers via External Electric Field for Field-Effect Transistors [J].
Guo, Yanan ;
Zheng, Hao ;
Guan, Yan ;
Luo, Xuebing ;
Peng, Juan .
ACS MACRO LETTERS, 2025, 14 (06) :695-701
[35]   A review for compact model of graphene field-effect transistors [J].
Lu, Nianduan ;
Wang, Lingfei ;
Li, Ling ;
Liu, Ming .
CHINESE PHYSICS B, 2017, 26 (03)
[36]   Terahertz heterodyne detection with silicon field-effect transistors [J].
Glaab, Diana ;
Boppel, Sebastian ;
Lisauskas, Alvydas ;
Pfeiffer, Ullrich ;
Oejefors, Erik ;
Roskos, Hartmut G. .
APPLIED PHYSICS LETTERS, 2010, 96 (04)
[37]   Review on Perovskite Semiconductor Field-Effect Transistors and Their Applications [J].
Abiram, Gnanasampanthan ;
Thanihaichelvan, Murugathas ;
Ravirajan, Punniamoorthy ;
Velauthapillai, Dhayalan .
NANOMATERIALS, 2022, 12 (14)
[38]   FIELD-EFFECT TRANSISTORS AS TRANSDUCERS IN BIOSENSORS FOR SUBSTRATES OF DEHYDROGENASES [J].
VERING, T ;
SCHUHMANN, W ;
SCHMIDT, HL ;
MIKOLAJICK, T ;
FALTER, T ;
RYSSEL, H ;
JANATA, J .
ELECTROANALYSIS, 1994, 6 (11-12) :953-956
[39]   Performance Limit Projection of Germanane Field-Effect Transistors [J].
AlMutairi, AbdulAziz ;
Zhao, Yiju ;
Yin, Demin ;
Yoon, Youngki .
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) :673-676
[40]   Balancing Aging Mechanisms in Organic Field-Effect Transistors [J].
Jia, Xiaojia ;
Fuentes-Hernandez, Canek ;
Wang, Cheng-Yin ;
Park, Youngrak ;
Kim, G. ;
Kippelen, Bernard .
ORGANIC AND HYBRID FIELD-EFFECT TRANSISTORS XVIII, 2019, 11097