Electric field-effect thermal transistors and logic gates

被引:0
|
作者
Xu, Deyu [1 ]
Zhao, Junming [1 ,2 ]
Liu, Linhua [3 ]
机构
[1] Harbin Inst Technol, Sch Energy Sci & Engn, Harbin 150001, Peoples R China
[2] Minist Ind & Informat Technol, Key Lab Aerosp Thermophys, Harbin 150001, Peoples R China
[3] Shandong Univ, Sch Energy & Power Engn, Qingdao 266237, Peoples R China
基金
中国国家自然科学基金;
关键词
Thermal transistor; Near -field radiative heat transfer; Field-effect transistor; Semiconductor; HEAT-TRANSFER; TRANSITION; RADIATION;
D O I
10.1016/j.ijheatmasstransfer.2024.125557
中图分类号
O414.1 [热力学];
学科分类号
摘要
A prototype of electric field-effect thermal transistor (EFETT) and the derived thermal logic gates are proposed, using electric potentials as inputs and temperature as outputs. The EFETT works on the modulation of near-field thermal photons transferred between the source and the drain semiconductors by the electric field-effect induced by gate voltage, thus altering the heat current and terminal temperature. It is demonstrated that arbitrary thermal logic gates can be built based on the EFETT conveniently. The characteristics of the EFETTs and the realized thermal logic gates are analyzed quantitatively. The proposed prototype opens a new avenue for the design of thermal transistors and thermal circuits which may motivate their applications for thermal information processing and thermal management.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films
    Kishimoto, Takaomi
    Ohno, Yasuhide
    Maehashi, Kenzo
    Inoue, Koichi
    Matsumoto, Kazuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (06) : 06GG021 - 06GG024
  • [2] Carbon Nanotube Field-Effect Transistors for Use as Pass Transistors in Integrated Logic Gates and Full Subtractor Circuits
    Ding, Li
    Zhang, Zhiyong
    Pei, Tian
    Liang, Shibo
    Wang, Sheng
    Zhou, Weiwei
    Liu, Jie
    Peng, Lian-Mao
    ACS NANO, 2012, 6 (05) : 4013 - 4019
  • [3] SAMPLE AND HOLD GATES USING FIELD-EFFECT TRANSISTORS
    TOZER, RC
    ELECTRONIC ENGINEERING, 1976, 48 (577): : 47 - &
  • [4] Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors
    Ma, Zinan
    Yuan, Peize
    Li, Lin
    Tang, Xiaojie
    Li, Xueping
    Zhang, Suicai
    Yu, Leiming
    Jiang, Yurong
    Song, Xiaohui
    Xia, Congxin
    NANO LETTERS, 2024, 24 (44) : 14058 - 14065
  • [5] Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors
    Baeg, Kang-Jun
    Khim, Dongyoon
    Kim, Juhwan
    Kim, Dong-Yu
    Sung, Si-Woo
    Yang, Byung-Do
    Noh, Yong-Young
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (01) : 126 - 128
  • [6] Flexible High-Temperature MoS2 Field-Effect Transistors and Logic Gates
    Zou, Yixuan
    Li, Peng
    Su, Caizhen
    Yan, Jiawen
    Zhao, Haojie
    Zhang, Zekun
    You, Zheng
    ACS NANO, 2024, 18 (13) : 9627 - 9635
  • [7] Integration of biomolecular logic gates with field-effect transducers
    Poghossian, A.
    Malzahn, K.
    Abouzar, M. H.
    Mehndiratta, P.
    Katz, E.
    Schoening, M. J.
    ELECTROCHIMICA ACTA, 2011, 56 (26) : 9661 - 9665
  • [8] THERMAL NOISE IN FIELD-EFFECT TRANSISTORS
    VANDERZIEL, A
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (08): : 1808 - &
  • [9] THERMAL NOISE IN FIELD-EFFECT TRANSISTORS
    TROFIMENKOFF, FN
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1236 - +
  • [10] Novel reconfigurable logic gates using spin metal-oxide-semiconductor field-effect transistors
    Matsuno, T
    Sugahara, S
    Tanaka, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (9A): : 6032 - 6037