Amorphous Ga2O3-based solar-blind photodetectors on crystalline and amorphous substrates: A comparative study

被引：1
|
作者：
Peng, Kai [1 ]
Xue, DiFei [2 ]
Lin, Wei [1 ]
Lv, PeiWen [2 ]
机构：
[1] Fuzhou Univ, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350108, Peoples R China
[2] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2024年 / 179卷
关键词：
Amorphous; Photodetectors; OXIDE; GA2O3;
D O I：
10.1016/j.mssp.2024.108491
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous Ga2O3 thin films were deposited on SiO2 and sapphire substrates by pulsed magnetron sputtering (PSD) at room temperature, respectively. Corresponding amorphous Ga2O3 thin film photodetectors were prepared. The oxygen vacancies and defects of the interface between films and substrates were found to determine the discrepancy by comparing the performance between these two photodetectors. Amorphous Ga2O3 photodetectors on SiO2 had highly performances with a responsivity of 417 A/W, detectivity of 7.84 x 1012 Jones, and external quantum efficiency of 2.01 x 105 %.
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页数：5
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