High energy density in artificial heterostructures through relaxation time modulation

被引：30

作者：

Han, Sangmoon ^{[1
]}

Kim, Justin S. ^{[1
,2
]}

Park, Eugene ^{[3
]}

Meng, Yuan ^{[1
]}

Xu, Zhihao ^{[1
,2
]}

Foucher, Alexandre C. ^{[3
]}

Jung, Gwan Yeong ^{[1
,2
]}

Roh, Ilpyo ^{[1
,4
]}

Lee, Sangho ^{[5
]}

Kim, Sun Ok ^{[1
,6
]}

Moon, Ji-Yun ^{[1
]}

Kim, Seung-Il ^{[1
]}

Bae, Sanggeun ^{[1
,2
]}

Zhang, Xinyuan ^{[3
]}

Park, Bo-In ^{[5
]}

Seo, Seunghwan ^{[5
,7
]}

Li, Yimeng ^{[1
]}

Shin, Heechang ^{[8
]}

Reidy, Kate ^{[3
]}

Hoang, Anh Tuan ^{[8
]}

Sundaram, Suresh ^{[9
]}

Vuong, Phuong ^{[9
]}

Kim, Chansoo ^{[2
,10
]}

Zhao, Junyi ^{[2
,10
]}

Hwang, Jinyeon ^{[11
]}

Wang, Chuan ^{[2
,10
]}

Choi, Hyungil ^{[4
]}

Kim, Dong-Hwan ^{[6
,12
]}

Kwon, Jimin ^{[13
]}

Park, Jin-Hong ^{[7
]}

Ougazzaden, Abdallah ^{[9
,14
]}

Lee, Jae-Hyun ^{[15
,16
]}

Ahn, Jong-Hyun ^{[8
]}

Kim, Jeehwan ^{[3
,5
]}

Mishra, Rohan ^{[1
,2
]}

Kim, Hyung-Seok ^{[11
,17
]}

Ross, Frances M. ^{[3
]}

Bae, Sang-Hoon ^{[1
,2
]}

机构：

[1] Washington Univ St Louis, Dept Mech Engn & Mat Sci, St Louis, MO 63130 USA

[2] Washington Univ St Louis, Inst Mat Sci & Engn, St Louis, MO 63130 USA

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] MOP Mat, Seoul 07285, South Korea

[5] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

[6] Sungkyunkwan Univ, Precis Biol Res Ctr, Suwon 16419, South Korea

[7] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea

[8] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea

[9] GT Europe, CNRS, Georgia Tech CNRS IRL 2958, F-57070 Metz, France

[10] Washington Univ St Louis, Dept Elect & Syst Engn, St Louis, MO 63130 USA

[11] Korea Inst Sci & Technol, Energy Storage Res Ctr, Seoul 02792, South Korea

[12] Sungkyunkwan Univ, Sch Chem Engn, Suwon 16419, South Korea

[13] Ulsan Natl Inst Sci & Technol UNIST, Dept Elect Engn, Ulsan 44919, South Korea

[14] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[15] Ajou Univ, Dept Mat Sci & Engn, Suwon 16499, South Korea

[16] Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea

[17] Kyung Hee Univ, KHU KIST Dept Converging Sci & Technol, Seoul 02447, South Korea

来源：

SCIENCE | 2024年 / 384卷 / 6693期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

STORAGE PERFORMANCE; THIN-FILMS; DIELECTRIC-PROPERTIES; INTERFACE; LAYER; INTEGRATION; CAPACITORS; EFFICIENCY;

D O I：

10.1126/science.adl2835

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Electrostatic capacitors are foundational components of advanced electronics and high-power electrical systems owing to their ultrafast charging-discharging capability. Ferroelectric materials offer high maximum polarization, but high remnant polarization has hindered their effective deployment in energy storage applications. Previous methodologies have encountered problems because of the deteriorated crystallinity of the ferroelectric materials. We introduce an approach to control the relaxation time using two-dimensional (2D) materials while minimizing energy loss by using 2D/3D/2D heterostructures and preserving the crystallinity of ferroelectric 3D materials. Using this approach, we were able to achieve an energy density of 191.7 joules per cubic centimeter with an efficiency greater than 90%. This precise control over relaxation time holds promise for a wide array of applications and has the potential to accelerate the development of highly efficient energy storage systems.

引用

页码：312 / 317

页数：6

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