Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications

被引:2
|
作者
Medjdoub, Farid [1 ]
Shinohara, Keisuke [2 ]
Thome, Fabian [3 ]
Moon, Jeong-sun [4 ]
Chumbes, Eduardo [5 ]
Guidry, Matthew T. [6 ]
Mishra, Umesh [6 ]
Zanoni, Enrico [7 ]
Meneghini, Matteo [7 ]
Meneghesso, Gaudenzio
Pomeroy, James W. [8 ]
Thingujam, Terirama [8 ]
Kuball, Martin [8 ]
机构
[1] Inst Elect Microelect & Nanotechnol, CNRS IEMN, F-59652 Villeneuve Dascq, France
[2] Teledyne Sci & Imaging, Thousand Oaks, CA 91360 USA
[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
[4] HRL Labs LLC, Malibu, CA 90265 USA
[5] Raytheon Technol, Andover, MA 01810 USA
[6] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[7] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
[8] Univ Bristol, Ctr Device Thermog & Reliabil, Bristol BS8 1TL, England
关键词
Wireless communication; Millimeter wave transistors; Power system measurements; PHEMTs; Millimeter wave technology; Thermal management; Transceivers; HEMTS; PERFORMANCE;
D O I
10.1109/MMM.2024.3428188
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G and 6G mobile networks, are of great interest to support high-datarate communications (e.g., 10 Gb/s or higher) and backhaul communications with >50 Gb/s. Since the E band and beyond can also support multigigahertz bandwidths, there is also growing interest in phased-array implementations. With its inherent integration advantage, SiGe phased arrays were demonstrated at the W band [1], with the latest result of a >10- Gb/s data rate [2]. In the case of point-to-point wireless links, III-V technologies [e.g., a pseudomorphic high-electron mobility transistor (pHEMT)] have also been utilized in full-duplex W-band links with a peak data rate of 10 Gb/s [2].
引用
收藏
页码:18 / 37
页数:20
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