Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications

被引：2

作者：

Medjdoub, Farid ^{[1
]}

Shinohara, Keisuke ^{[2
]}

Thome, Fabian ^{[3
]}

Moon, Jeong-sun ^{[4
]}

Chumbes, Eduardo ^{[5
]}

Guidry, Matthew T. ^{[6
]}

Mishra, Umesh ^{[6
]}

Zanoni, Enrico ^{[7
]}

Meneghini, Matteo ^{[7
]}

Meneghesso, Gaudenzio

Pomeroy, James W. ^{[8
]}

Thingujam, Terirama ^{[8
]}

Kuball, Martin ^{[8
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, CNRS IEMN, F-59652 Villeneuve Dascq, France

[2] Teledyne Sci & Imaging, Thousand Oaks, CA 91360 USA

[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[4] HRL Labs LLC, Malibu, CA 90265 USA

[5] Raytheon Technol, Andover, MA 01810 USA

[6] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[7] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[8] Univ Bristol, Ctr Device Thermog & Reliabil, Bristol BS8 1TL, England

来源：

IEEE MICROWAVE MAGAZINE | 2024年 / 25卷 / 10期

关键词：

Wireless communication; Millimeter wave transistors; Power system measurements; PHEMTs; Millimeter wave technology; Thermal management; Transceivers; HEMTS; PERFORMANCE;

D O I：

10.1109/MMM.2024.3428188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G and 6G mobile networks, are of great interest to support high-datarate communications (e.g., 10 Gb/s or higher) and backhaul communications with >50 Gb/s. Since the E band and beyond can also support multigigahertz bandwidths, there is also growing interest in phased-array implementations. With its inherent integration advantage, SiGe phased arrays were demonstrated at the W band [1], with the latest result of a >10- Gb/s data rate [2]. In the case of point-to-point wireless links, III-V technologies [e.g., a pseudomorphic high-electron mobility transistor (pHEMT)] have also been utilized in full-duplex W-band links with a peak data rate of 10 Gb/s [2].

引用

页码：18 / 37

页数：20

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