Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells

被引：0

作者：

van Lange, Victor T. ^{[1
]}

Peeters, Wouter H. J. ^{[1
]}

Verheijen, Marcel A. ^{[1
]}

van Hemert, Max C. ^{[1
]}

Bakkers, Erik P. A. M. ^{[1
]}

Haverkort, Jos E. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Appl Phys & Sci Educ, Eindhoven, Netherlands

来源：

2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS | 2024年

关键词：

Silicon photonics; quantum well; quantum confinement; hexagonal silicon-germanium;

D O I：

10.1109/SiPhotonics60897.2024.10543877

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.

引用

页数：2

共 11 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] Band lineup at hexagonal SixGe1-x/SiyGe1-y alloy interfaces [J].

Belabbes, Abderrezak ;

Botti, Silvana ;

Bechstedt, Friedhelm .

PHYSICAL REVIEW B, 2022, 106 (08)

[3] Electronic structure and optical properties of Si, Ge and diamond in the lonsdaleite phase [J].

De, Amrit ;

Pryor, Craig E. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2014, 26 (04)

[4] Direct-bandgap emission from hexagonal Ge and SiGe alloys [J].

Fadaly, Elham M. T. ;

Dijkstra, Alain ;

Suckert, Jens Rene ;

Ziss, Dorian ;

van Tilburg, Marvin A. J. ;

Mao, Chenyang ;

Ren, Yizhen ;

van Lange, Victor T. ;

Korzun, Ksenia ;

Kolling, Sebastian ;

Verheijen, Marcel A. ;

Busse, David ;

Roedl, Claudia ;

Furthmueller, Juergen ;

Bechstedt, Friedhelm ;

Stangl, Julian ;

Finley, Jonathan J. ;

Botti, Silvana ;

Haverkort, Jos E. M. ;

Bakkers, Erik P. A. M. .

NATURE, 2020, 580 (7802) :205-+

[5]

Fox M., 2007, SPRINGER HDB ELECT P, P1021

[6] Emergent Properties Resulting from Type-II Band Alignment in Semiconductor Nanoheterostructures [J].

Lo, Shun S. ;

Mirkovic, Tihana ;

Chuang, Chi-Hung ;

Burda, Clemens ;

Scholes, Gregory D. .

ADVANCED MATERIALS, 2011, 23 (02) :180-197

[7] A quantum dot single-photon turnstile device [J].

Michler, P ;

Kiraz, A ;

Becher, C ;

Schoenfeld, WV ;

Petroff, PM ;

Zhang, LD ;

Hu, E ;

Imamoglu, A .

SCIENCE, 2000, 290 (5500) :2282-2285

[8] Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications [J].

Roedl, Claudia ;

Furthmueller, Jurgen ;

Suckert, Jens Rene ;

Armuzza, Valerio ;

Bechstedt, Friedhelm ;

Botti, Silvana .

PHYSICAL REVIEW MATERIALS, 2019, 3 (03)

[9] Breakdown of Corner States and Carrier Localization by Monolayer Fluctuations in Radial Nanowire Quantum Wells [J].

Sonner, Maximilian M. ;

Sitek, Anna ;

Janker, Lisa ;

Rudolph, Daniel ;

Ruhstorfer, Daniel ;

Doeblinger, Markus ;

Manolescu, Andrei ;

Abstreiter, Gerhard ;

Finley, Jonathan J. ;

Wixforth, Achim ;

Koblmueller, Gregor ;

Krenner, Hubert J. .

NANO LETTERS, 2019, 19 (05) :3336-3343

[10] The past, present, and future of silicon photonics [J].

Soref, Richard .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2006, 12 (06) :1678-1687

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