Impact of Self-Heating in 5nm FinFETs at Cryogenic Temperatures for Reliable Quantum Computing: Device-Circuit Interaction

被引:0
|
作者
Parihar, Shivendra Singh [1 ,2 ]
Pahwa, Girish [3 ]
Chauhan, Yogesh S. [2 ]
Amrouch, Hussam [4 ]
机构
[1] Univ Stuttgart, Semicond Test & Reliabil, Stuttgart, Germany
[2] Indian Inst Technol Kanpur, Kanpur, Uttar Pradesh, India
[3] Univ Calif Berkeley Berkeley, Berkeley, CA USA
[4] Tech Univ Munich, Chair AI Processor Design, Munich Inst Robot & Machine Intelligence, Munich, Germany
来源
2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 | 2024年
关键词
SOI MOSFETS; CMOS; OPERATION; FDSOI;
D O I
10.1109/IRPS48228.2024.10529431
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cryogenic Complementary Metal Oxide Semiconductor (CMOS) circuitry is inevitable to drive and read out qubits for the realization of scalable Quantum Computers (QCs). Analog circuits such as current mirrors and digital-to-analog converters (DACs) are basic building blocks of the control circuits in QCs. Qubits are highly sensitive to thermal noise inflicted by the control circuitry, which might be caused by the self-heating (SH) in transistors. Apart from Qubits, data converters' resolution is also susceptible to SH and deteriorates due to the SH, which can negatively impact the qubit read-out process in quantum computing. The prior knowledge of SH-induced temperature rise is necessary to design a resilient CMOS-based control circuitry. In this work, we explore the impact of SH on 5 nm FinFETs and analog circuits for control electronics in QCs using the cryogenic-aware BSIM-CMG compact model at both cryogenic and room temperatures.
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页数:7
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