Surface topography and subsurface structure evolution in laser micro polishing of monocrystalline silicon

Ultra-smooth silicon surfaces, crucial in short-wave optics, can be marred by surface defects and subsurface damage incurred during machining, thereby affecting the imaging quality and transmission efficiency of optical components. Laser micro-polishing emerges as a versatile and efficient technique for ultra -precision polishing. This study aims to scrutinize the surface topography and subsurface structural evolution of monocrystalline silicon wafers during laser micro-polishing experimentally and to formulate an accessible evaluation model that incorporates multiple process parameters for optimal polishing results. As laser fluence escalates, the polishing process can be divided into six regimes: bulge, coalescence, smoothness, groove, ripple, and ablation. Each regime ' s crystal structure evolution is analyzed using Raman spectroscopy, demonstrating a close relationship with the surface expansion preceding the melting of monocrystalline silicon. Surface roughness diminishes from 6 nm to 0.7 nm, and an optimal crystalline quality devoid of an amorphous layer, residual stress, or significant subsurface damage is achieved. Amorphous silicon, 20 mu m thick, is converted into monocrystalline silicon through recrystallization, and subsurface distortions and dislocations are rectified due to silicon atom redistribution. Moreover, a mapping relationship between multiple process parameters and surface polishing effects is established. A dimensionless fluence considering multiple parameters is derived, and a predictive model for process parameter optimization to secure optimal polishing results is proposed.