Heavy-Ion-Induced Displacement Damage Effects on WOx ECRAM

被引：1

作者：

Marinella, Matthew J. ^{[1
]}

Bennett, Christopher H. ^{[2
]}

Zutter, Brian ^{[3
]}

Siath, Max ^{[1
]}

Spear, Matthew ^{[1
]}

Vizkelethy, Gyorgy ^{[2
]}

Fuller, Elliot ^{[3
]}

Xiao, T. Patrick ^{[2
]}

Hughart, David ^{[2
]}

Agarwal, Sapan ^{[3
]}

Li, Yiyang ^{[4
]}

Talin, A. Alec ^{[3
]}

机构：

[1] Arizona State Univ, Elect Comp & Energy Engn, Tempe, AZ 85281 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Sandia Natl Labs, Livermore, CA 94550 USA

[4] Univ Michigan, Mat Sci Dept, Ann Arbor, MI 48109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 04期

关键词：

Electrochemical random-access memory (ECRAM); heavy ion irradiation; mobility; neuromorphic computing; nonvolatile memory; vacancies; RADIATION; TAOX;

D O I：

10.1109/TNS.2024.3360409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrochemical random-access memory (ECRAM) is an emerging nonvolatile memory device which is promising for analog in-memory computing applications. Displacement damage in WO3-x ECRAM was experimentally characterized for the first time using a 1 MeV Au beam. At moderate levels of displacement damage (below fluence of similar to 10(11) cm(-2)), metal oxide ECRAM does not exhibit significant change, demonstrating the suitability of ECRAM for applications such as spaceborne computing. At high fluences (10(11) cm(-2)), where high concentrations of oxygen vacancies are created, channel conductivity was found to increase linearly with increasing vacancy concentration. A model of vacancy concentration versus conductivity allows the extraction of the mobility and initial doping concentration.

引用

页码：579 / 584

页数：6

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