Q-switched Nd:YVO4 laser operating at 1064 nm with NiPS3 nanoflakes onto a silica metasurface as saturable absorbers

被引:3
作者
Zhang, Zheng [1 ,2 ]
Deng, Junhong [3 ]
Hu, Xinmeng [2 ]
Ma, Xuhang [4 ]
Wei, Qihuo [5 ]
Gao, Shufang [2 ,6 ]
Feng, Jun [7 ]
机构
[1] Harbin Univ Technol, 92 Xidazhi St, Harbin 150001, Peoples R China
[2] Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
[3] Southern Univ Sci & Technol, Inst Quantum Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
[4] Southern Univ Sci & Technol, Core Res Facil, Shenzhen 518055, Guangdong, Peoples R China
[5] Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518055, Peoples R China
[6] Yangtze Univ, Sch Phys & Optoelect Engn, Jingzhou 434023, Peoples R China
[7] Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China
基金
中国博士后科学基金;
关键词
BAND-GAP; GRAPHENE; SATURATION; SCATTERING; NANOSHEET; DYNAMICS; LIGHT;
D O I
10.1364/OE.523489
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this work, we show that a metasurface can be used to improve the performance of the two-dimensional (2D) material saturable absorber in a Nd:YVO 4 solid-state laser. To our knowledge, the hybrid saturable absorber was fabricated by spraying the NiPS 3 nanoflakes onto a silica metasurface for the first time. It is shown that the optical absorption, modulation depth, saturation intensity, and ultrafast recovery time of the metasurface-NiPS 3 saturable absorber exhibit better performance than the 2D material control device. In a proof -of -concept experiment, the Q -switched pulses with a pulse duration of 20.5 ns, repetition rate of 4.35 MHz, output power of 2.3 W, peak power of 30.61 W, and pulse energy of 0.63 mu J were experimentally demonstrated. These findings suggest that a hybrid saturable absorber is a promising candidate for developing pulsed laser and optical modulators. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:22218 / 22232
页数:15
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