Cr3+ activated Gd3Sc2Al3O12 garnet phosphor ceramic with broadband emissions and enhanced thermal stability toward high-power near-infrared LED/LD

被引:4
作者
Ma, Yuelong [1 ]
Shao, Chenyang [1 ]
Wu, Lan [1 ]
Li, Xingcan [1 ]
Tian, Ye [1 ]
Zeng, Lingwei [2 ]
Lu, Lili [4 ]
Zhang, Boqiang [1 ]
Wang, Zongcai [1 ]
Chen, Xingzhou [1 ]
Xue, Dongbin [1 ]
Jiang, Guoxing [1 ]
Hui, Yanbo [1 ]
Chen, Shuqi [5 ]
Chen, Daqin [3 ]
机构
[1] Henan Univ Technol, Sch Mech & Elect Engn, Zhengzhou 450001, Henan, Peoples R China
[2] Hunan Univ Sci & Technol, Sch Chem & Chem Engn, Xiangtan 411201, Hunan, Peoples R China
[3] Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350117, Fujian, Peoples R China
[4] Henan Univ Technol, Coll Food Sci & Technol, Zhengzhou 450046, Henan, Peoples R China
[5] SongShan Lab, Zhengzhou 450046, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
NIR phosphor ceramic; NIR LED/ LD device; Broadband emission; Thermal stability; Photoelectric efficiency; STATE; LUMINESCENCE; EFFICIENCY;
D O I
10.1016/j.ceramint.2024.04.389
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The development of high-quality phosphor ceramics with high photoelectric efficiencies and thermal stabilities is essential for realizing high-power broadband near-infrared light sources. In this study, a series of pure-phase Gd3Sc2Al3O12:Cr3+ near-infrared (NIR) phosphor ceramics (GdScCr NIR-PCs) exhibiting remarkable thermal stability and broadband emission were fabricated for the first time using a vacuum sintering technique. The integrated emission intensity at 423 K is 79.8 % of that at room temperature. The GdSc08Cr exhibits an emission peak at a wavelength of 785 nm, with a full width at half maximum (FWHM) of 116.9 nm under 460 nm excitation. By integrating the GdScCr NIR-PC with a blue light-emitting diode/laser diode (LED/LD) excitation source, the NIR LED prototype achieved a maximum output power of 112.19 mW at 300 mA with a photoelectric conversion efficiency of 13.64 % at 150 mA, and the NIR LD prototype achieved a maximum power output of 484.34 mW at 2.3 A. The operating temperatures of NIR-PCs were 73.1 degrees C at 300 mA for LED and 90.7 degrees C at 2.5 A for LD. Moreover, the application of the prepared GdScCr NIR-PCs for fruit and grain detection was performed. These results demonstrate that the prepared GdScCr NIR-PCs possess substantial potential for application in highpower broadband NIR spectroscopy.
引用
收藏
页码:26624 / 26633
页数:10
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