Controlled integration of InP nanoislands with CMOS-compatible Si using nanoheteroepitaxy approach

Indium phosphide (InP) nanoislands are grown on pre-patterned Silicon (001) nanotip substrate using gassource molecular-beam epitaxy via nanoheteroepitaxy approach. The study explores the critical role of growth temperature in achieving selectivity, governed by diffusion length. Our study reveals that temperatures of about 480 degrees C and lower, lead to parasitic growth, while temperatures about 540 degrees C with an indium growth rate of about 0.7 & Aring;.s-1 and phosphine flux of 4 sccm inhibit selective growth. The establishment of an optimal temperature window for selective InP growth is demonstrated for a temperature range of 490 degrees C to 530 degrees C. Comprehensive structural and optical analyses using atomic force microscopy, Raman spectroscopy, x-ray diffraction, and photoluminescence confirm a zincblende structure of indium phosphide with fully relaxed islands. These results demonstrate the capability to precisely tailor the position of InP nanoislands through a noncatalytic nanoheteroepitaxy approach, marking a crucial advancement in integrating InP nanoisland arrays on silicon devices.