g-C3 N4 /TiO2-X heterojunction with high-efficiency carrier separation and multiple charge transfer paths for ultrasensitive SERS sensing

被引:4
作者
Jiang, Xin [1 ]
Jiang, Han [1 ,2 ]
Tang, Yimin [1 ]
Zhang, Huizhu [2 ]
Yang, Libin [1 ]
Wang, Xiuwen [1 ]
Zhao, Bing [3 ]
机构
[1] Qiqihar Univ, Coll Chem & Chem Engn, Technol Innovat Ctr Ind Hemp State Market Regulat, Qiqihar 161006, Peoples R China
[2] Jiamusi Univ, Coll Pharm, Jiamusi 154007, Peoples R China
[3] Jilin Univ, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China
基金
中国国家自然科学基金; 黑龙江省自然科学基金;
关键词
SERS; Semiconductor; Heterojunction; Surface defect; Detection; ENHANCED RAMAN-SCATTERING; TIO2; NANOPARTICLES;
D O I
10.1016/j.cclet.2023.109415
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The combination of interface engineering and defect engineering is a promising strategy for developing new semiconducting surface-enhanced Raman scattering (SERS) substrate. Herein, an organic/inorganic hybrid g-C3N4/TiO2-X heterojunction with synchronous generation of strong interface effect and abundant surface oxygen vacancy (O-V) defect was prepared by a simple sol-hydrothermal procedure with a help of urea. Due to the improved substrate-to-molecule charge transfer (CT) from joint contribution of high-efficiency carrier separation induced by strong interface coupling effect and multiple CT paths derived from abundant surface O-V, g-C3N4/TiO2-X substrate exhibits greatly enhanced SERS effect for non-resonant 4-mercaptobenzoic acid (4-MBA) probe. The enhancement factor of g-C3N4/TiO2-X substrate for 4-MBA is as high as 5.57x10(6), and the substrate exhibits ultra-high stability and excellent spectral reproducibility. More meaningfully, the developed g-C3N4/TiO2-X heterojunction can be used to execute an ultrasensitive detection for antibiotic residues in real water system, even comprehensive evaluation of multi-component residues. (c) 2024 Published by Elsevier B.V. on behalf of Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences.
引用
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页数:6
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