Optimization of Laser-induced Deep Etching for TGV Fabrication in Fused Silica

被引:0
作者
Liu, Jingli [1 ]
Xia, Chenhui [2 ]
Ming, Xuefei [2 ]
Yin, Chunyan [1 ]
机构
[1] Southeast Univ, Sch Microelect, Wuxi, Peoples R China
[2] China Elect Technol Grp Corp, Res Inst 58, Wuxi, Peoples R China
来源
2023 24TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT | 2023年
关键词
laser-induced deep etching; TGV; ultrashort pulsed laser; glass interposer; Bessel-Gaussian beam;
D O I
10.1109/ICEPT59018.2023.10492062
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
laser-induced deep etching (LIDE) is a promising technology for efficient and cost-effective through glass via (TGV) manufacturing. In this paper, the effect of nine independently adjustable parameters of LIDE on the TGV properties using ultrashort pulsed lasers was experimentally investigated. Furthermore, the influence of these parameters on the processing is explained by the mechanism of laser-material interaction in nonlinear optics. The taper and surface roughness of TGV with different processing parameters were characterized using optical microscopy and scanning electron microscopy. Further, the entire set of LIDE processing parameters were optimized in order to increase the selectivity and reducing the surface roughness without extra machining. This research can contribute to improving the maximum machinable density and interconnection performance of TGV and reducing the potential difficulty of metal filling in the glass interposer manufacturing process.
引用
收藏
页数:6
相关论文
共 15 条
  • [1] Polarization sensitive elements fabricated by femtosecond laser nanostructuring of glass [Invited]
    Beresna, Martynas
    Gecevicius, Mindaugas
    Kazansky, Peter G.
    [J]. OPTICAL MATERIALS EXPRESS, 2011, 1 (04): : 783 - 795
  • [2] Femtosecond Laser Assisted 3D Etching Using Inorganic-Organic Etchant
    Butkute, Agne
    Merkininkaite, Greta
    Jurksas, Tomas
    Stancikas, Jokubas
    Baravykas, Tomas
    Vargalis, Rokas
    Tickunas, Titas
    Bachmann, Julien
    Sakirzanovas, Simas
    Sirutkaitis, Valdas
    Jonusauskas, Linas
    [J]. MATERIALS, 2022, 15 (08)
  • [3] Investigation of low-cost through glass vias formation on borosilicate glass by picosecond laser-induced selective etching
    Chen, Li
    Yu, Daquan
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (12) : 16481 - 16493
  • [4] Development of Laser-Induced Deep Etching Process for Through Glass Via
    Chen, Li
    Wu, Heng
    Zhang, Mingchuan
    Jiang, Feng
    Yu, Tian
    Yu, Daquan
    [J]. ICEPT2019: THE 2019 20TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, 2019,
  • [5] Development of 3D Wafer Level Hermetic Packaging with Through Glass Vias (TGVs) and Transient Liquid Phase Bonding Technology for RF Filter
    Chen, Zuohuan
    Yu, Daquan
    Zhong, Yi
    [J]. SENSORS, 2022, 22 (06)
  • [6] Surface structuring of fused silica with asymmetric femtosecond laser pulse bursts
    Hernandez-Rueda, Javier
    Siegel, Jan
    Galvan-Sosa, Marcial
    Ruiz de la Cruz, Alexandro
    Solis, Javier
    [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2013, 30 (05) : 1352 - 1356
  • [7] Polarization-selective etching in femtosecond laser-assisted microfluidic channel fabrication in fused silica
    Hnatovsky, C
    Taylor, RS
    Simova, E
    Bhardwaj, VR
    Rayner, DM
    Corkum, PB
    [J]. OPTICS LETTERS, 2005, 30 (14) : 1867 - 1869
  • [8] Nonlinear multiphoton modification of glass substrates for fabrication of high aspect ratio through-glass vias
    Lee, Min-Kai
    Yu, Jyun-Zong
    Chang, Hsin-Yu
    Chang, Chia-Yuan
    Liu, Chien-Sheng
    Lin, Pai-Chen
    [J]. AIP ADVANCES, 2022, 12 (05)
  • [9] Polarization-insensitive space-selective etching in fused silica induced by picosecond laser irradiation
    Li, Xiaolong
    Xu, Jian
    Lin, Zijie
    Qi, Jia
    Wang, Peng
    Chu, Wei
    Fang, Zhiwei
    Wang, Zhenhua
    Chai, Zhifang
    Cheng, Ya
    [J]. APPLIED SURFACE SCIENCE, 2019, 485 : 188 - 193
  • [10] Ostholt R., 2014, P 5 EL SYST INT TECH, P1