Metal Fluorides Passivate II-VI and III-V Quantum Dots

被引:3
|
作者
Valleix, Rodolphe [1 ,2 ]
Zhang, William [1 ]
Jordan, Abraham J. [1 ]
Guillemeney, Lilian [2 ]
Castro, Leslie G. [1 ]
Zekarias, Bereket L. [1 ]
Park, Sungho V. [1 ]
Wang, Oliver [1 ]
Owen, Jonathan S. [1 ]
机构
[1] Columbia Univ, Dept Chem, New York, NY 10027 USA
[2] Univ Lyon, ENS Lyon, CNRS, Lab Chim, F-69342 Lyon, France
关键词
quantum dots; fluoride; surface passivation; phosphonium; photoluminescence quantum yield; INP NANOCRYSTALS; LIGAND-EXCHANGE; NMR; SURFACE; PHOTOLUMINESCENCE; STOICHIOMETRY;
D O I
10.1021/acs.nanolett.4c00610
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Quantum dots (QDs) with metal fluoride surface ligands were prepared via reaction with anhydrous oleylammonium fluoride. Carboxylate terminated II-VI QDs underwent carboxylate for fluoride exchange, while InP QDs underwent photochemical acidolysis yielding oleylamine, PH3, and InF3. The final photoluminescence quantum yield (PLQY) reached 83% for InP and near unity for core-shell QDs. Core-only CdS QDs showed dramatic improvements in PLQY, but only after exposure to air. Following etching, the InP QDs were bound by oleylamine ligands that were characterized by the frequency and breadth of the corresponding nu(N-H) bands in the infrared absorption spectrum. The fluoride content (1.6-9.2 nm(-2)) was measured by titration with chlorotrimethylsilane and compared with the oleylamine content (2.3-5.1 nm(-2)) supporting the formation of densely covered surfaces. The influence of metal fluoride adsorption on the air stability of QDs is discussed.
引用
收藏
页码:5722 / 5728
页数:7
相关论文
共 50 条
  • [1] Study of the Properties of II-VI and III-V Semiconductor Quantum Dots
    Mikhailov, A. I.
    Kabanov, V. F.
    Gorbachev, I. A.
    Glukhovsky, E. G.
    SEMICONDUCTORS, 2018, 52 (06) : 750 - 754
  • [2] Growth of II-VI/III-V heterovalent quantum structures
    Lassise, Maxwell B.
    Wang, Peng
    Tracy, Brian D.
    Chen, Guopeng
    Smith, David J.
    Zhang, Yong-Hang
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (02):
  • [3] Soluble III-V and II-VI quantum wires.
    Buhro, WE
    Yu, H
    Wang, FD
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 226 : U732 - U732
  • [4] III-V/II-VI heterovalent double quantum wells
    Toropov, AA
    Sedova, IV
    Sorokin, SV
    Terent'ev, YV
    Ivchenko, EL
    Lykov, DN
    Ivanov, SV
    Bergman, JP
    Monemar, B
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (04): : 819 - 826
  • [5] Influence of an electric field on fine properties of III-V and II-VI quantum dots systems
    Kowalik, K
    Krebs, O
    Kudelski, A
    Golnik, A
    Lemaître, A
    Senellart, P
    Karczewski, G
    Kossut, J
    Gaj, J
    Voisin, P
    ACTA PHYSICA POLONICA A, 2004, 106 (02) : 177 - 184
  • [6] Luminescence of II-VI and III-V nanostructures
    Mynbaev, K. D.
    Shilyaev, A. V.
    Semakova, A. A.
    Bykhanova, E. V.
    Bazhenov, N. L.
    OPTO-ELECTRONICS REVIEW, 2017, 25 (03) : 209 - 214
  • [7] Hydrogen in III-V and II-VI semiconductors
    McCluskey, MD
    Haller, EE
    HYDROGEN IN SEMICONDUCTORS II, 1999, 61 : 373 - 440
  • [8] Ferromagnetic III-V and II-VI semiconductors
    Dietl, T
    Ohno, H
    MRS BULLETIN, 2003, 28 (10) : 714 - 719
  • [9] Fe in III-V and II-VI semiconductors
    Malguth, Enno
    Hoffmann, Axel
    Phillips, Matthew R.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (03): : 455 - 480
  • [10] ON THE ETCHING OF III-V AND II-VI COMPOUNDS
    WOLFF, GA
    FRAWLEY, JJ
    HIETANEN, JR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : C203 - C203