Recent Advanced Ultra-Wide Bandgap β-Ga2O3 Material and Device Technologies

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. Its noteworthy attributes include a large bandgap (E-g) of 4.8 eV, high theoretical critical breakdown field strength (E-C) of 8 MV cm(-1), and saturation velocity (nu(s)) of 2 x 10(7) cm s(-1), as well as high Baliga figures of merit (BFOM) of 3000. In addition, Ga2O3 has the advantages of large-size substrates that can be achieved by low-cost melt-grown techniques. This review provides a partial overview of pivotal milestones and recent advancements in the Ga2O3 material growth and device performance. It begins with a discussion of the fundamental material properties of Ga2O3, followed by a description of substrate growth and epitaxial techniques for Ga2O3. Subsequently, the contact technologies between Ga2O3 and other materials are fully elucidated. Moreover, this article also culminates with a detailed analysis of Ga2O3-based high voltage and high frequency power devices. Some challenges and solutions, such as the lack of p-type doping, low thermal conductivity, and low mobility are also presented and investigated in this review.