共 98 条
Nanocrystal-based thermoelectric SnTe-NaSbSe 2 alloys with strengthened band convergence and reduced thermal conductivity
被引:11
作者:
Nan, Bingfei
[1
,2
]
Chang, Cheng
[3
]
Li, Zhihao
[4
]
Kapuria, Nilotpal
[5
,6
,7
]
Han, Xu
[8
]
Li, Mengyao
[9
]
Wang, Hongchao
[4
]
Ryan, Kevin M.
[5
,6
]
Arbiol, Jordi
[8
,10
]
Cabot, Andreu
[1
,10
]
机构:
[1] Catalonia Inst Energy Res IREC, Sant Adria Besos 08930, Barcelona, Spain
[2] Univ Barcelona, Marti Franques 1, Barcelona 08028, Spain
[3] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[4] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[5] Univ Limerick, Dept Chem Sci, Limerick V94T 9PX, Ireland
[6] Univ Limerick, Bernal Inst, Limerick V94T 9PX, Ireland
[7] Indiana Univ, Dept Chem, 800 E Kirkwood, Bloomington, IN 47405 USA
[8] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Catalonia, Spain
[9] Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450001, Peoples R China
[10] ICREA, Pg Lluis Co 23, Barcelona 08010, Catalonia, Spain
基金:
爱尔兰科学基金会;
关键词:
Thermoelectric;
Nanocrystals;
SnTe;
NaSbSe;
2;
Alloy;
Sn vacancies;
TIN TELLURIDE;
PERFORMANCE;
BI;
FIGURE;
DOPANT;
INDIUM;
MERIT;
ZN;
D O I:
10.1016/j.cej.2024.152367
中图分类号:
X [环境科学、安全科学];
学科分类号:
08 ;
0830 ;
摘要:
Ternary I-V-VI 2 colloidal NaSbSe 2 nanocrystals are herein used to improve the performance of lead-free SnTe thermoelectric materials. We showcase a versatile bottom-up engineering approach to produce nanocrystal-based SnTe-NaSbSe 2 alloys from the rapid hot press of colloidal nanocrystal building blocks. The incorporation of NaSbSe 2 nanocrystals significantly enhances the Seebeck coefficient of SnTe. The band convergence and simultaneous increasing band gap of SnTe-NaSbSe 2 alloys are certified by the first-principles density functional theory calculations. Besides, defect engineering generated by the incorporation of NaSbSe 2 nanocrystals such as Sn vacancies, substitution point defects, dense dislocations, and strains generated by the NaSbSe 2 nanoparticles incorporation result in a dramatic reduction of the lattice thermal conductivity below the amorphous limit of pure SnTe, down to 0.38 W m - 1 K -1 . As a consequence, power factors enhance up to 1.77 mW m - 1 K -2 , which is -193 % higher than that of the pristine SnTe, and thermoelectric figures of merit up to 1.15 at 823 K for (SnTe) 0.85 (NaSbSe 2 ) 0.15 are achieved.
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页数:12
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