Equivalent Circuit Model of the Carrier-Depletion-Based Push-Pull Silicon Optical Modulators With T-Rail Slow Wave Electrodes

被引:0
|
作者
Zhuang, Dongwei [1 ,2 ,3 ]
Na, Quanxin [3 ]
Xie, Qijie [3 ]
Zhang, Nan [3 ]
Zhang, Lanxuan [3 ]
Li, Xin [3 ]
Zuo, Guomeng [3 ]
Zhang, Hao [3 ]
Wang, Lei [3 ]
Qin, Li [1 ]
Song, Junfeng [3 ,4 ]
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Peng Cheng Lab, Shenzhen 518000, Peoples R China
[4] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
来源
IEEE PHOTONICS JOURNAL | 2024年 / 16卷 / 04期
基金
中国国家自然科学基金;
关键词
Modulation; Electrodes; Integrated circuit modeling; Bandwidth; Capacitance; Silicon; Impedance; Equivalent circuits; microwave propagation; optical communication equipment; optical modulation; traveling wave devices; CLOSED-FORM EXPRESSIONS; MACH-ZEHNDER; LOW-VOLTAGE; OPTIMIZATION; DESIGN; BAND;
D O I
10.1109/JPHOT.2024.3427830
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The t-rail electrode is an effective method to enhance the silicon optoelectronic modulator's performance. To design and optimize T-rail electrodes, engineers often rely on finite-element numerical simulations that require complex device modeling and enormous computing resources. In this paper, we present an equivalent circuit model for carrier-depletion-based push-pull silicon modulators with T-rail electrodes. The analytical solution for the bandwidth of the modulator can be derived from the equivalent circuit. The utilization of the analytical solution offers advantages in terms of memory conservation and flexibility. The values calculated by the equivalent circuit model are in excellent agreement with the numerical full-wave HFSS simulations. Hence, the proposed model can accurately and efficiently develop silicon optical modulators.
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页数:9
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