All-perovskite tandem solar cells: from fundamentals to technological progress

被引:17
作者
Lim, Jaekeun [1 ]
Park, Nam-Gyu [2 ,3 ]
Seok, Sang Il [4 ]
Saliba, Michael [1 ,5 ]
机构
[1] Univ Stuttgart, Inst Photovolta Ipv, Stuttgart, Germany
[2] Sungkyunkwan Univ, Ctr Antibonding Regulated Crystals, Sch Chem Engn, Suwon 16419, South Korea
[3] Sungkyunkwan Univ, SKKU Inst Energy Sci & Technol SIEST, Suwon, South Korea
[4] Ulsan Natl Inst Sci & Technol, Sch Energy & Chem Engn, Dept Energy Engn, Ulsan, South Korea
[5] Forschungszentrum Julich, Helmholtz Young Invest Grp FRONTRUNNER, IEK5 Photovolta, Julich, Germany
基金
新加坡国家研究基金会; 欧洲研究理事会;
关键词
MIXED-HALIDE PEROVSKITES; HIGHLY-EFFICIENT; IODIDE PEROVSKITES; CARRIER LIFETIMES; THIN-FILMS; PERFORMANCE; SN; TOLERANCE; TIN; CRYSTALLIZATION;
D O I
10.1039/d3ee03638c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic-inorganic perovskite materials have gradually progressed from single-junction solar cells to tandem (double) or even multi-junction (triple-junction) solar cells as all-perovskite tandem solar cells (APTSCs). Perovskites have numerous advantages: (1) tunable optical bandgaps, (2) low-cost, e.g. via solution-processing, inexpensive precursors, and compatibility with many thin-film processing technologies, (3) scalability and lightweight, and (4) eco-friendliness related to low CO2 emission. However, APTSCs face challenges regarding stability caused by Sn2+ oxidation in narrow bandgap perovskites, low performance due to Voc deficit in the wide bandgap range, non-standardisation of charge recombination layers, and challenging thin-film deposition as each layer must be nearly perfectly homogenous. Here, we discuss the fundamentals of APTSCs and technological progress in constructing each layer of the all-perovskite stacks. Furthermore, the theoretical power conversion efficiency (PCE) limitation of APTSCs is discussed using simulations. This review provides fundamental knowledge and development directions towards the commercialising of advantageous all-perovskite tandem solar cells.
引用
收藏
页码:4390 / 4425
页数:36
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