Electron-irradiation induced unconventional phase transition of fi-Ga2O3 epitaxial single-crystal thin film observed by in-situ TEM

被引:3
作者
Zhu, Qing [1 ]
Fan, Jiatong [1 ,2 ]
Wei, Yuxiang [1 ,2 ]
Wang, Zhan [3 ]
Zhu, Jiejie [1 ]
Sun, Jing [1 ,2 ]
Wang, Zhenni [2 ]
Wang, Xichen [1 ]
Yang, Ling [1 ]
Song, Shaojie [4 ]
Lei, Yimin [1 ,2 ]
Ma, Xiaohua [1 ]
机构
[1] Xidian Univ, State Key Lab Wide Bandgap Semicond Devices & Inte, 2 Taibai Rd, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, 266 Xifeng Rd, Xian 710126, Peoples R China
[3] Xian Univ Posts & Telecommun, Sch Elect Engn, 618 West Changan St, Xian 710121, Peoples R China
[4] Northwestern Polytech Univ, Sch Mat Sci & Engn, 1 Dongxiang Rd, Xian 710129, Peoples R China
来源
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T | 2024年 / 30卷
基金
中国国家自然科学基金;
关键词
Electron irradiation; Allotropy phase transition; In-situ TEM; BALIGAS FIGURE; GALLIUM OXIDE; MERIT;
D O I
10.1016/j.jmrt.2024.03.138
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, the phase transition process of fi-Ga2O3 thin films under heating and (or) electron irradiation condition was investigated by in-situ transmission electron microscopy. It is found that only under the high temperature, fi-Ga2O3 did not undergo phase transition even when the temperature was up to 1000 degrees C. When under electron irradiation condition, the unconventional phase transition from fi-Ga2O3 to delta-Ga2O3 occurred with a slow rate. When electron irradiation was coupled with a thermal field, the initial temperature of phase transition decreased, and the speed of phase transition also greatly accelerated. The new phase maintains crystallography relationship with the fi-Ga2O3 parent phase as following: [010]fi//[011]delta, (200)fi//(211)delta, and (402)fi//(411)delta. The results reveal that electron irradiation can trigger the phase transition process from fi-Ga2O3 to delta-Ga2O3, and the high temperature obviously accelerates the rate of phase transition process.
引用
收藏
页码:2397 / 2405
页数:9
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