Strain-dependent insulating state and Kondo effect in epitaxial SrIrO3 films

被引:1
|
作者
Rimal, Gaurab [1 ,2 ]
Tasnim, Tanzila [1 ]
Ortiz, Gabriel Calderon [3 ]
Sterbinsky, George E. [4 ]
Hwang, Jinwoo [3 ]
Comes, Ryan B. [1 ]
机构
[1] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[2] Western Michigan Univ, Dept Phys, Kalamazoo, MI 49008 USA
[3] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA
[4] Argonne Natl Lab, Adv Photon Source, Lemont, IL 60439 USA
来源
PHYSICAL REVIEW MATERIALS | 2024年 / 8卷 / 07期
基金
美国国家科学基金会;
关键词
Compendex;
D O I
10.1103/PhysRevMaterials.8.L071201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this Letter, we study the role of epitaxial strain on the electronic behavior of thin SrIrO3 films. We find that compressive epitaxial strain leads to metallic transport behavior, but a slight tensile strain shows gapped behavior. Temperature-dependent resistivity measurements are used to examine different behaviors in films as a function of strain. We find Kondo contributions to the resistivity, with stronger effects in films that are thinner and under less compressive epitaxial strain. These results show the potential to tune SrIrO3 into Kondo insulating states and open possibilities for a quantum critical point that can be controlled with strain in epitaxial films.
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页数:6
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