METAL-OXIDE-METAL CAPACITOR SIMULATION AND MODELING BY VIRTUAL FABRICATION

被引:0
作者
Wang, Qingpeng [1 ]
Zhong, Yu Jia [1 ]
Deng, Quan [1 ]
Lyu, Pengfei [1 ]
Sun, Lifei [1 ]
Chen, Yu De [1 ]
Huang, Jacky [1 ]
Vincent, Benjamin [1 ]
Chakarov, Ivan [1 ]
Ervin, Joseph [1 ]
机构
[1] Lam Res Co, Shanghai 201210, Peoples R China
来源
CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC | 2024年
关键词
D O I
10.1109/CSTIC61820.2024.10531911
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
In this study, a Metal-Oxide-Metal capacitor is fabricated, calibrated, and modeled in a virtual fabrication platform. The capacitance performance is evaluated using different numbers of metal layers, metal fingers, and metal to metal space through execution of a full factorial DOE. A traditional compact model and a neural network model are used to fit the simulation data, respectively. The neural network model displayed a 0.81% fitting error, which was superior to that obtained with the compact model.
引用
收藏
页数:3
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