Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects

被引:23
作者
Cao, Fa [1 ]
Liu, Ying [1 ]
Liu, Mei [1 ]
Han, Zeyao [1 ]
Xu, Xiaobao [2 ]
Fan, Quli [1 ]
Sun, Bin [1 ]
机构
[1] Nanjing Univ Posts & Telecommun NJUPT, Inst Adv Mat IAM, Sch Mat Sci & Engn, State Key Lab Organ Elect & Informat Displays, Nanjing 210023, Peoples R China
[2] Southeast Univ, Sch Elect Sci & Engn, Nanjing 210000, Peoples R China
基金
中国国家自然科学基金;
关键词
PEROVSKITE PHOTODETECTORS; NANOROD ARRAYS; ZNO NANORODS; TRANSPARENT; ULTRAFAST; GRAPHENE; HETEROJUNCTIONS; NANOSTRUCTURE; RESPONSIVITY; CONVERSION;
D O I
10.34133/research.0385
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
引用
收藏
页数:23
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