Improvement in thermoelectric figure of merit of Bi2Se3 crystal with Sulfur substitution

被引:0
作者
Joshi, Yash V. [1 ]
Deshpande, M. P. [1 ]
Chaki, S. H. [1 ]
Pandya, Swati J. [1 ]
机构
[1] Sardar Patel Univ, PG Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India
关键词
A1. Crystal structure; A2. Bridgman technique; B1. Bismuth compounds; B2. Semiconducting materials; ELECTRONIC-PROPERTIES; PHYSICAL-PROPERTIES; TRANSPORT-PROPERTIES; PERFORMANCE; GROWTH; BI2TE3; PHASE;
D O I
10.1016/j.jcrysgro.2024.127839
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Bismuth Selenide has gained a great deal of attention as a thermoelectric material owing to its lower toxicity compared to Bi2Te3 based materials. In this work, Sulfur substitution in Bi2Se3 is carried out by the vertical Bridgman method and the influence of Sulfur on the structural, electrical and thermal properties of Bi2Se3 was studied. The thermoelectric figure of merit (ZT) was calculated from electrical conductivity, Seebeck coefficient and thermal conductivity, which were measured from 303 K to 773 K. Sulfur incorporation did not improve the electrical conductivity of Bi2Se3 but proved to be beneficial in improving the Seebeck coefficient and reducing thermal conductivity. Hence, the calculated figure of merit of Bi2Se2.7S0.3 crystal comes out to be 0.72 at 543 K, which is higher than that of pure Bi2Se3 crystal, which is 0.31 at 533 K.
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页数:12
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