A 28GHz CMOS Differential Bi-Directional Amplifier for 5G NR

被引：0

作者：

Li, Zheng ^{[1
]}

Pang, Jian ^{[1
]}

Kubozoe, Ryo ^{[1
]}

Luo, Xueting ^{[1
]}

Wu, Rui ^{[1
]}

Wang, Yun ^{[1
]}

You, Dongwon ^{[1
]}

Fadila, Ashbir Aviat ^{[1
]}

Alvin, Joshua ^{[1
]}

Liu, Bangan ^{[1
]}

Sun, Zheng ^{[1
]}

Huang, Hongye ^{[1
]}

Shirane, Atsushi ^{[1
]}

Okada, Kenichi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, 2-12-1-S3-28 Ookayama,Meguro Ku, Tokyo 1528552, Japan

来源：

2020 25TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE, ASP-DAC 2020 | 2020年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A 28GHz differential bi-directional amplifier in a standard 65nm CMOS process is presented. This work is realized based on the neutralized bi-directional core together with the fully shared inter-stage matching networks. The core chip area is only 0.11mm(2). At 28GHz, a 15.1-dBm saturation output power and a 4.2 -dB noise figure are realized for PA mode and LNA mode, respectively. The DC power consumptions for PA mode and LNA mode are 149mW and 31mW, respectively, under 1-V DC supply.

引用

页码：5 / 6

页数：2

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