Effect of the Implantation of O2+ Ions on the Composition and Electronic Structure of CdS Films

被引：0
作者：
Umirzakov, B. E. [1 ]
Sodikjanov, J. Sh. [3 ]
Isakhanov, Z. A. [2 ]
Abduvayitov, A. A. [1 ]
机构：
[1] Karimov Tashkent State Tech Univ, Tashkent 100095, Uzbekistan
[2] Uzbek Acad Sci, Arifov Inst Ion Plasma & Laser Technol, Tashkent 100125, Uzbekistan
[3] Andijan Machine Bldg Inst, Andijan 170100, Uzbekistan
来源：
JOURNAL OF SURFACE INVESTIGATION | 2024年 / 18卷 / 03期
关键词：
electronic structure; CdS films; composition; distribution profile; evaporation; ion bombardment; nanoscale structure; OPTICAL-PROPERTIES; ION-IMPLANTATION; NANOSCALE PHASES; METAL SILICIDES; SI;
D O I：
10.1134/S1027451024700150
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A method of low-energy ion implantation is used for the first time to create oxide layers on the surface of a CdS material. After annealing at a temperature of 800 K of CdS implanted with ions with an energy of E-0 = 1 keV at a dose of Dsat approximate to 8 x 10(16) cm(-2), a three-component film of CdO0.7S0.3 is formed, and after annealing at 900 K a CdO film is formed. Using Auger-electron spectroscopy, photoelectron spectroscopy, and light-absorption spectroscopy, the composition, parameters of the energy bands, optical parameters, and densities of state of valence electrons of CdO0.7S0.3 and CdO nanofilms are determined. The results of the study allow one to consider the possibility of using CdO0.7S0.3 films as transparent films and contact layers in various devices including solar cells.
引用
收藏
页码：594 / 597
页数：4
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