1.2 kV/400 A SiC Source Turn-Off MOSFET Intelligent Power Module

被引：0
|
作者：
Guo, Zhicheng [1 ,2 ]
Huang, Alex Q. [3 ]
机构：
[1] Univ Texas Austin UT Austin, power Elect & power Syst, Austin, TX 78712 USA
[2] Arizona State Univ ASU, Tempe, AZ 85287 USA
[3] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Blacksburg, VA USA
来源：
IEEE POWER ELECTRONICS MAGAZINE | 2024年 / 11卷 / 02期
关键词：
Temperature sensors; Temperature measurement; MOSFET; Costs; Silicon carbide; Power supplies; Multichip modules;
D O I：
10.1109/MPEL.2024.3395069
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Excellent switching performances and higher levels of integration are two critical topics for intelligent power modules (IPM). This article proposes a novel and cost effective 1.2 kV/400 A SiC half-bridge power module based on the Source Turn-off (STO) MOSFET. STO MOSFET is a driver integrated MOSFET architecture that can achieve ultra-fast turn-on and turn-off operations beyond the traditional voltage source gate driver approach. A built-in current and temperature monitoring features are also integrated. The IPM integrates discrete SiC devices, direct bond copper (DBC) base plate, STO gate driver, auxiliary power supply, current monitor, temperature monitor, and decoupling caps, making it plug-and-play ready.
引用
收藏
页码：34 / 38
页数：5
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