Optimization of transparent conductive properties of magnetron sputtered Sb-doped SnO2 films by RF power: Towards application in polymer-dispersed liquid crystal (PDLC) films

Sb-doped SnO2 (ATO) films were prepared with different RF powers (PRF) under two O2 flow rates (FO2) by magnetron sputtering, and then subjected to rapid thermal annealing (RTA) treatment. The effects of PRF, FO2, and RTA on the crystallinity, stress, surface morphology, conductive properties, transmittance in visible-light range (TVis), and energy gap (Eg) of the films were investigated. As the PRF increases, the film crystallinity improves or first improves and then slightly degrades, and the compressive stress decreases. With increasing PRF, the surface changes from textured to granular morphology and from granular to honeycomb-like morphology under two FO2, respectively. Meanwhile, the conductive properties first enhance and then degrade, and the TVis and Eg tend to decrease, especially at higher PRF. Basically, the films prepared with higher FO2 have lower compressive stress, inferior conductive properties, and larger TVis and Eg compared with the films prepared with lower FO2 . After RTA, the film crystallinity obviously improves, the compressive stress transforms into tensile stress, and the surface morphology has not undergone significant changes. Meanwhile, the conductive properties significantly enhance and Eg obviously increases. The TVis of the films prepared with lower FO2 can be increased by RTA. The influence mechanisms of the above factors on the structure and optoelectronic properties of the ATO films were explored, and ultimately, the ATO films have the TVis of 76.35-80.86%, sheet resistance of 51.7-91.9 Omega/sq., and quality factor of 1.03-1.67 x 10-3 Omega- 1 within the optimized PRF range. Polymer-dispersed liquid crystal (PDLC) films were fabricated using optimized performance ATO films as electrodes, and their on-state transmittance, off-state transmittance, threshold electric field, and saturation electric field were 2.08-4.61%, 61.69-68.56%, 0.656-0.796 V/mu m, and 1.68-2.108 V/mu m, respectively. The current results indicate the potential application of ATO films in PDLC films as electrode.