Aluminum in 4H-SiC above 10 MeV

被引：0

作者：

Belanche, Manuel ^{[1
,2
]}

Yonezawa, Yoshiyuki

Heller, Rene ^{[3
]}

Mueller, Arnold ^{[4
]}

Vockenhuber, Christof ^{[4
]}

Martinella, Corinna ^{[1
]}

Rueb, Michael ^{[5
]}

Kato, Masashi ^{[6
]}

Murata, Koichi ^{[7
]}

Tsuchida, Hidekazu ^{[7
]}

Nakayama, Koji ^{[2
]}

Grossner, Ulrike ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Adv Power Semicond Lab, Physikstr 3, CH-8092 Zurich, Switzerland

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

[3] Inst Ion Beam Phys & Mat Res, Helmholtz Zentrum Dresden Rossendorf, D-01328 Dresden, Germany

[4] Swiss Fed Inst Technol, Lab Ion Beam Phys, Otto Stern Weg 5, CH-8093 Zurich, Switzerland

[5] Mi2 Factory GmbH, D-07745 Jena, Germany

[6] Nagoya Inst Technol, Nagoya 4668555, Japan

[7] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2024年 / 179卷

基金：

欧盟地平线“2020”;

关键词：

Silicon carbide; Power devices; Superjunction; Ion implantation in SiC; High-energy ion implantation; Ion channeling; Aluminum implantation; ION-IMPLANTATION;

D O I：

10.1016/j.mssp.2024.108461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study explores high-energy aluminum (Al) implantation above 10 MeV as a fabrication process to facilitate the creation of deep doping regions in silicon carbide (SiC). Experimental investigations were conducted to evaluate the technical feasibility of ultra -high energy implantation and high-energy channeling implantation of aluminum into 4H-SiC. Ultra-high-energy Al implantations at 30 and 48 MeV were performed, revealing limitations such as increased charge dispersion and decreased current near accelerator technical limits. In contrast, high-energy channeling implantations at 12, 15, and 20 MeV demonstrated successful Al channeling implantations into 4H-SiC, emphasizing the importance of precision in crystal orientation and mounting systems. Results indicate that channeling implantations, with precise instrumentation, are a preferred approach over non-channeled ultra-high-energy methods for fabricating deep doping regions in SiC, holding promise for advancing the next generation of high-voltage SiC devices.

引用

页数：8

共 56 条

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