Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy

Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four -point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonstrate the potential of two Drude model -based approaches to extract resistivity values from terahertz time -domain spectroscopy measurements of silicon in a wide range from about 10 - 3 ohm cm to 10 2 ohm cm. One method is an analytical approach and the other is an optimization approach. Four -point probe measurements are used as a reference. In addition, the spatial resistivity distribution is imaged by X -Y scanning of the samples to detect inhomogeneities in the doping distribution. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement