High modulation efficiency sinusoidal vertical PN junction phase shifter in silicon-on-insulator

被引:0
作者
Ma, Li [1 ]
Liu, Pengfei [1 ]
Xia, Changquan [1 ]
Qian, Qinyu [1 ]
Chen, Haitao [1 ]
Cheng, Liwen [1 ]
机构
[1] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China
关键词
MACH-ZEHNDER MODULATOR; OPTICAL MODULATOR; HIGH-SPEED; CARRIER DEPLETION; SLOW-LIGHT; PHOTONICS;
D O I
10.1364/AO.530301
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper, a sinusoidal vertical PN junction phase shifter on a silicon waveguide is designed, and the results demonstrate that modifying the shape of the PN junction significantly increases the area of the depletion region within the standard waveguide width of 500 nm, thereby enhancing the overlap between the depletion region and optical waveguide modes under reverse bias conditions. Furthermore, by adjusting the sinusoidal amplitude ( A ) of the doping contact interface, it is observed that when A = 0.065 mu m, the resulting sinusoidal PN junction most effectively enhances the interaction between carriers and photons, leading to the highest modulation efficiency and the lowest loss. Based on this, further adjustment of the doping concentration distribution in the waveguide was conducted using a doping compensation method. It is observed that setting the doping concentration at 3 x 10 18 cm - 3 in the heavily doped region and at 1 x 10 18 cm - 3 in the lightly doped region enables the phase shifter to achieve high modulation efficiency while maintaining low loss. This is attributed to the highest optical intensity being concentrated in the central region of the waveguide, as well as to the positive correlation between doping concentration and modulation efficiency. The final designed device with a length of 1.5 mm successfully attained a low V pi L of 0.58 V <middle dot> cm, resulting in high modulation efficiency. By employing traveling wave electrodes and ensuring that the effective refractive index of the radio frequency (RF) matches the optical group index (OGI), circuit-level simulations were conducted. The device exhibited a 3 dB bandwidth of 8.85 GHz and eye diagrams of up to 40 Gbit/s, with a maximum extinction ratio (ER) of 8.27 dB and a bit error rate (BER) of 8.83 x 10 - 6 , which can be widely used in the field of high-speed silicon optical modules. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
引用
收藏
页码:5661 / 5669
页数:9
相关论文
共 50 条
  • [1] Silicon photonics for telecom and data-com applications
    Asakawa, Kiyoshi
    Sugimoto, Yoshimasa
    Nakamura, Shigeru
    [J]. OPTO-ELECTRONIC ADVANCES, 2020, 3 (10) : 1 - 26
  • [2] Low Vπ Silicon photonics modulators with highly linear epitaxially grown phase shifters
    Azadeh, Saeed Sharif
    Merget, Florian
    Romero-Garcia, Sebastian
    Moscoso-Martir, Alvaro
    von den Driesch, Nils
    Mueller, Juliana
    Mantl, Siegfried
    Buca, Dan
    Witzens, Jeremy
    [J]. OPTICS EXPRESS, 2015, 23 (18): : 23526 - 23550
  • [3] Large-area Fabry-Perot modulator based on electro-optic polymers
    Benter, N
    Bertram, RP
    Soergel, E
    Buse, K
    Apitz, D
    Jacobsen, LB
    Johansen, PM
    [J]. APPLIED OPTICS, 2005, 44 (29) : 6235 - 6239
  • [4] Silicon Photonics
    Bergman, Keren
    Beausoleil, Ray
    Milojicic, Dejan
    [J]. COMPUTER, 2022, 55 (04) : 78 - 81
  • [5] Design of a silicon Mach-Zehnder modulator with a U-type PN junction
    Cao, Tongtong
    Fei, Yonghao
    Zhang, Libin
    Cao, Yanmei
    Chen, Shaowu
    [J]. APPLIED OPTICS, 2013, 52 (24) : 5941 - 5948
  • [6] 2D Materials Enabled Next-Generation Integrated Optoelectronics: from Fabrication to Applications
    Cheng, Zhao
    Cao, Rui
    Wei, Kangkang
    Yao, Yuhan
    Liu, Xinyu
    Kang, Jianlong
    Dong, Jianji
    Shi, Zhe
    Zhang, Han
    Zhang, Xinliang
    [J]. ADVANCED SCIENCE, 2021, 8 (11)
  • [7] Athermal Broadband Graphene Optical Modulator with 35 GHz Speed
    Dalir, Hamed
    Xia, Yang
    Wang, Yuan
    Zhang, Xiang
    [J]. ACS PHOTONICS, 2016, 3 (09): : 1564 - 1568
  • [8] The evolution of silicon photonics as an enabling technology for optical interconnection
    Doylend, Jonathan K.
    Knights, Andrew P.
    [J]. LASER & PHOTONICS REVIEWS, 2012, 6 (04) : 504 - 525
  • [9] Integrated lithium niobate microwave photonic processing engine
    Feng, Hanke
    Ge, Tong
    Guo, Xiaoqing
    Wang, Benshan
    Zhang, Yiwen
    Chen, Zhaoxi
    Zhu, Sha
    Zhang, Ke
    Sun, Wenzhao
    Huang, Chaoran
    Yuan, Yixuan
    Wang, Cheng
    [J]. NATURE, 2024, 627 (8002) : 80 - +
  • [10] Recent Progress in Silicon-Based Slow-Light Electro-Optic Modulators
    Han, Changhao
    Jin, Ming
    Tao, Yuansheng
    Shen, Bitao
    Wang, Xingjun
    [J]. MICROMACHINES, 2022, 13 (03)