Low-power-consumption modulation of short-cavity DBR laser on SiO 2 /Si substrate

被引：0

作者：

Kanno, Erina ^{[1
]}

Takeda, Koji ^{[1
]}

Fujii, Takuro ^{[1
]}

Kakitsuka, Takaaki ^{[1
,2
]}

Matsuo, Shinji ^{[1
]}

机构：

[1] NTT Corp, NTT Device Technol Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan

[2] Waseda Univ, 2-7 Hibikino,Wakamatsu Ku, Kitakyushu, Fukuoka 8080135, Japan

来源：

OPTICS EXPRESS | 2024年 / 32卷 / 08期

关键词：

ACTIVE-REGION;

D O I：

10.1364/OE.514929

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We developed short -active -length distributed Bragg reflector (DBR) lasers to reduce the power consumption of chip -to -chip optical interconnects. These lasers have buried bulk InGaAsP waveguides to increase the coupling efficiency between the active region and DBR to 99.79% from the 98.14% of our previous DBR lasers that had InP channel waveguides. We achieved continuous wave operation of 5- to 80-mu m active -length DBR lasers and the 5 -mu m -long laser consumed 24 fJ/bit with a 10-Gbps NRZ signal. The threshold current of the 5-mu m laser was 51 mu A, which compares favorably to our previous 10-mu m DBR lasers with a threshold current of 170 mu A.

引用

页码：14746 / 14754

页数：9

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