A Study of Physical Unclonable Function by Dielectric Breakdown in High-κ Metal Gate Device

被引：0

作者：

Lin, Geng-Shiu ^{[1
]}

King, Ya-Chin ^{[1
]}

Lin, Chrong-Jung ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Microelect Lab, Hsinchu, Taiwan

来源：

2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA | 2024年

关键词：

dielectric breakdown; high-kappa metal gate; physical unclonable function;

D O I：

10.1109/VLSITSA60681.2024.10546409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A complementary 3T-PUF cell is proposed and implemented by 28nm High-kappa Metal Gate (HKMG) CMOS logic process. The new PUF cell takes use of gate dielectric breakdown on either side of the center transistor arbitrarily with self-inhibit mechanism, the cell can create and store uniquely random data. A unique negative bias read achieves the clear distribution of resistive states so that it can be established. Experiments show that the complementary 3T-PUF cell provides good data stability after long-term read stress and high temperature bake. The uniqueness and randomness of PUF array are further evaluated by Hamming-Distance (HD) and following Hamming-Weight (HW).

引用

页数：2