Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p-n Heterojunction Photodetectors

被引:3
作者
Pan, Baojun [1 ]
Dou, Zhenjun [2 ]
Su, Mingming [1 ]
Li, Ya [1 ]
Wu, Jialing [1 ]
Chang, Wanwan [1 ]
Wang, Peijian [2 ]
Zhang, Lijie [2 ]
Zhao, Lei [3 ]
Zhao, Mei [2 ]
Wang, Sui-Dong [1 ]
机构
[1] Macau Univ Sci & Technol, Macao Inst Mat Sci & Engn MIMSE, MUST SUDA Joint Res Ctr Adv Funct Mat, Taipa 999078, Macao, Peoples R China
[2] Wenzhou Univ, Inst New Mat & Ind Technol, Coll Chem & Mat Engn, Key Lab Carbon Mat Zhejiang Prov, Wenzhou 325035, Peoples R China
[3] Lanzhou City Univ, Sch Elect Engn, Lanzhou 730070, Peoples R China
关键词
substrate-selective growth; Sb2Te3/WS2 vertical heterojunction; p-n heterojunction; chemical vapor deposition; photodetector; THERMOELECTRIC PROPERTIES; GROWTH; HETEROSTRUCTURES; FILM;
D O I
10.3390/nano14100884
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb2Te3, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p-n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb2Te3 onto inert mica substrates, providing valuable insights into the integration of Sb2Te3 with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb2Te3 on pre-existing WS2 surfaces on SiO2/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb2Te3/WS2 heterojunctions. Finally, the development of 2D Sb2Te3/WS2 optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 mu s/503 mu s, respectively.
引用
收藏
页数:11
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