Studies of indium nanostructures growth models on A3B6 layered templates

被引：0
作者：
Galiy, P. V. [1 ]
Nenchuk, T. M. [1 ]
Ciszewski, A. [2 ]
Mazur, P. [2 ]
Dzyuba, V. I. [1 ]
Makar, T. R. [1 ]
机构：
[1] Ivan Franko Lviv Natl Univ, Elect & Comp Technol Dept, 50 Dragomanov St, UA-79005 Lvov, Ukraine
[2] Univ Wroclaw, Inst Expt Phys, Wroclaw, Poland
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2024年 / 768卷 / 15期
关键词：
A(3)B(6) layered crystal chalcogenides; hetero nanostructures; indium telluride; power spectral density; roughness; scanning tunneling microscopy; MICROSCOPY; TOPOGRAPHY; MORPHOLOGY; FILMS;
D O I：
10.1080/15421406.2024.2361970
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This article explores the surface architecture formation on layered A(3)B(6) semiconductors, such as In4Se3, InSe, and InTe, focusing on kinetics of surface roughness parameters, such as RMS, skewness and kurtosis, and power spectral density (PSD) under indium deposition studied through large-scale 1 x 1 mu m(2) and 150 x 150 nm(2) scanning tunneling microscopy (STM) images analysis. Our findings reveal common kinetics of surface parameters across different crystals, suggesting fundamental similarities in their interface kinetics. Particularly, PSD analysis elucidates the role of low-frequency spatial structures, underscoring their significance in surface roughness kinetics to some extent independent of the specific layered crystal surface structure.
引用
收藏
页码：799 / 808
页数：10
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