Emulation of optical and electrical synaptic functions in MoS2/SnSe2 van der Waals heterojunction memtransistors

被引:2
作者
Li, Xiaoli [1 ]
Chen, Fengxiang [1 ]
Wang, Xiaodong [1 ]
Wang, Lisheng [1 ]
机构
[1] Wuhan Univ Technol, Sch Sci, Dept Phys Sci & Technol, Wuhan 430070, Peoples R China
基金
中国国家自然科学基金;
关键词
memtransistors; 2D materials; SnSe2; MoS2; neural synaptic function simulation; MEMRISTOR; SNSE2; MODULATION;
D O I
10.35848/1347-4065/ad46b3
中图分类号
O59 [应用物理学];
学科分类号
摘要
The simulation of advanced synaptic functions of the human brain by electrical devices could be an effective strategy for constructing high-efficiency neuromorphic systems. Two-dimensional (2D) materials are promising candidates in the fabrication of optoelectronic devices due to their excellent photoelectric performances. Herein, opto-electronic synapses based on layered MoS2/SnSe2 van der Waals heterojunction(vdwH) memtransistors have been investigated. It can be observed that the typical synaptic functions, such as excitatory/inhibitory postsynaptic current, long-term potentiation/depression, paired-pulse facilitation/depression (PPF/PPD), as well as the transition from short-term memory (STM)to long-term memory (LTM) are realized using both electrical and optical pulses as input signals. In addition, the time constant for PPF under optical pulses was 3.91 s, which was comparable with the response times of biological neural synapses. So the MoS2/SnSe2 memtransistor could work as an electronic synapse in future artificial neural networks, inspiring the implementation of 2D materials for neuromorphic storage and computation.
引用
收藏
页数:7
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