机构:
Univ Sulaimani, Res & Dev Ctr, Kurdistan Reg Govt, Sulaimani 46001, Iraq
Charmo Univ, Coll Sci, Dept Phys, Sulaymaniyah 46023, Iraq
Univ Sulaimani, Res & Dev Ctr, Kurdistan Reg Govt, Sulaymaniyah, IraqUniv Sulaimani, Coll Sci, Phys Dept, Kurdistan Reg Govt, Qlyasan St, Sulaymaniyah 46001, Iraq
Aziz, Shujahadeen B.
[2
,3
,5
]
Dannoun, Elham M. A.
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h-index: 0
机构:
Prince Sultan Univ, Dept Math & Sci, Woman Campus, POB 66833, Riyadh 11586, Saudi ArabiaUniv Sulaimani, Coll Sci, Phys Dept, Kurdistan Reg Govt, Qlyasan St, Sulaymaniyah 46001, Iraq
alpha-Al2O3;
DFT;
Band structure & density of states;
Optical properties;
ELECTRONIC-STRUCTURE;
AB-INITIO;
ALPHA-AL2O3;
1ST-PRINCIPLES;
AL2O3;
CR;
D O I:
10.1016/j.heliyon.2024.e27029
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
In this study, first-principles calculations using Density Functional Theory (DFT) have been conducted, which were carried out using the Vienna Ab initio Simulation Package (VASP) to examine the effect of Tl insertion on electronic and optical properties of the alpha-Al2O3. Alumina materials are abundant and the main shortcoming of alumina for photocatalyst applications is their large energy band gap and little absorption in the visible region of electromagnetic (EM) radiation. Insertion of transition metals (TM) into semiconductor or insulating materials is a hot approach to improve the absorption behavior of these materials using DFT assessment. In the current work an analysis of the band structure (BS) and the density of states (DOS); comprising both the total density of states (TDOS) as well as the partial density of states (PDOS) were carried out. The BS diagram revealed that various concentrations of Tl insertion into the alpha-Al2O3 reduced the band gap to 2.38 eV. In the density of state diagram, the band gap energy shifted to lower photon energies with increasing Tl concentrations which supports the BS results. The band gap obtained from the first peak in the imaginary part of dielectric function is close enough to those established from the BS diagram. Distinguished shifting of absorption coefficient to lower photon energy (2.27 eV) reveals the suitability of the doped alpha-Al2O3 for various applications. The increase of refractive index (n) with increasing of Tl into the alpha-Al2O3 structure is evidence for the increase of charge, which is a source for polarization and attenuates the velocity of light in a medium. The increase of optical conductivity with photon energy started after band gap values. The reflectance, absorbance and transmittance results indicate that the doped alpha-Al2O3 is responsive to the visible region of EM radiation while in pure state almost transparent.
机构:
Don State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, RussiaDon State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, Russia
Lavrentyev, A. A.
Gabrelian, B. V.
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机构:
Don State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, RussiaDon State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, Russia
Gabrelian, B. V.
Vu, V. T.
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Don State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, RussiaDon State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, Russia
Vu, V. T.
Shkumat, P. N.
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Don State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, RussiaDon State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, Russia
Shkumat, P. N.
Myronchuk, G. L.
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机构:
Eastern European Natl Univ, Dept Phys, UA-43025 Lutsk, UkraineDon State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, Russia
Myronchuk, G. L.
Khvyshchun, M.
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机构:
Lutsk Natl Tech Univ, UA-43018 Lutsk, UkraineDon State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, Russia
Khvyshchun, M.
Fedorchuk, A. O.
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机构:
Lviv Natl Univ Vet Med & Biotechnol, Dept Inorgan & Organ Chem, UA-79010 Lvov, UkraineDon State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, Russia
Fedorchuk, A. O.
Parasyuk, O. V.
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机构:
Eastern European Natl Univ, Dept Inorgan & Phys Chem, UA-43025 Lutsk, UkraineDon State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, Russia
Parasyuk, O. V.
Khyzhun, O. Y.
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机构:
Natl Acad Sci Ukraine, Frantsevych Inst Problems Mat Sci, UA-03142 Kiev, UkraineDon State Tech Univ, Dept Elect Engn & Elect, Rostov Na Donu 344010, Russia
机构:
Univ Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, AlgeriaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria
Nassah, Y.
Benmakhlouf, A.
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机构:
Univ Amar Telidji, Fac Technol, Dept Tronc Commun Sci & Technol, Laghouat 03000, AlgeriaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria
Benmakhlouf, A.
Hadjeris, L.
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机构:
Univ Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, AlgeriaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria
Hadjeris, L.
Helaimia, T.
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机构:
Univ Amar Telidji, Fac Technol, Dept Tronc Commun Sci & Technol, Laghouat 03000, AlgeriaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria
Helaimia, T.
Khenata, R.
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机构:
Univ Mascara, Dept Technol, Lab Phys Quant & Modelisat Math LPQ3M, Mascara 29000, AlgeriaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria
Khenata, R.
Bouhemadou, A.
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机构:
Univ Farhat Abbes Setif 1, Lab Developing New Mat & Their Characterizat, Setif 19000, AlgeriaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria
Bouhemadou, A.
Omran, S. Bin
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机构:
King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi ArabiaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria
Omran, S. Bin
Sharma, R.
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机构:
Feroze Gandhi Inst Engn & Technol, Dept Appl Sci, Raebareli 229001, IndiaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria
Sharma, R.
Said, Souraya Goumri
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机构:
Alfaisal Univ, Coll Sci, Phys Dept, Riyadh 11533, Saudi ArabiaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria
Said, Souraya Goumri
Srivastava, V
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机构:
Lovely Profess Univ, Sch Chem Engn & Phys Sci, Dept Phys, Phagwara 144411, IndiaUniv Arbi Ben Mhidi, Fac Sci Exactes, Dept Phys, Oum El Bouaghi 04000, Algeria