Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

被引:1
作者
Guo, Shuming [1 ,2 ,3 ]
Yu, Jiajie [1 ,2 ,3 ]
Wang, Hao [3 ]
Jin, Xingcheng [3 ]
Li, Hongbo [3 ]
Wu, Chao [1 ,2 ,3 ]
Chen, Lin [1 ,2 ]
Lin, Yinyin [4 ]
Zhang, David Wei [1 ,2 ]
机构
[1] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
[2] Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China
[3] Design Serv Engn Ctr CSMC Technol Corp, Wuxi 214028, Peoples R China
[4] Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 201203, Peoples R China
关键词
Chip level; ferroelectric memory (FRAM); Hf0.5Zr0.5O2; high reliability; high yield; MECHANISMS; BEHAVIOR; FILMS;
D O I
10.1109/TED.2024.3394460
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Emerging embedded nonvolatile memory (eNVM) based on hafnium oxide ferroelectric materials has shown great advantages such as high reliability, high speed, good scalability, and CMOS process compatibility. Here, a 2T2C structure ferroelectric memory (FRAM) is proposed based on the 180-nm CMOS technology and a TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitor. The device exhibits great ferroelectric properties with the remnant polarization (2P(r)) of 30 mu C/cm(2) under a low operation voltage of 2 V. Also, it shows great high-temperature endurance and retention properties, which has no obvious degradation after 10(10) cycles pulses and 10(4) s under 175 degree celsius. In addition, a 2-Mb capacity memory chip with 16 x 128 kb subarrays using the 2T2C structure and separated word lines (WLs) was fabricated. The wafer can maintain a high yield of 98.28% after baking for 30 h at 175 degree celsius, which shows great reliability in the chip level.
引用
收藏
页码:3645 / 3650
页数:6
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