Hopping crossover and high-temperature superspin glass behavior in Ni films deposited on MoS2

被引:1
作者
Shand, P. M. [1 ]
Moua, Y. [1 ]
Harms, H. [1 ]
Gorgen, C. [1 ]
Cunningham, C. J. [1 ]
Lukashev, P., V [1 ]
Kidd, T. E. [1 ]
Stollenwerk, A. J. [1 ]
机构
[1] Univ Northern Iowa, Phys Dept, Cedar Falls, IA 50614 USA
关键词
ELECTRICAL-RESISTIVITY; GROWTH-MORPHOLOGY; CONDUCTIVITY; MAGNETORESISTANCE; ANISOTROPY; TRANSPORT; METALS;
D O I
10.1103/PhysRevB.109.245432
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Realizing the potential of MoS 2 and other two-dimensional semiconductors in spintronic devices requires a fundamental understanding of their interaction with ferromagnetic metals. We have investigated the transport and magnetic properties of thin Ni films grown on single -crystal MoS 2 substrates. The Ni is found to have a granular morphology with an average grain size of approximately 2 nm. Like previously investigated granular Ni/insulator composites below the percolation threshold, transport is found to proceed via hopping. However, our Ni/MoS 2 sample exhibits a dual crossover: activated hopping to T - 1 / 2 variable -range hopping at a higher temperature and then a transition to power -law behavior at a lower temperature. The magnetoresistance was used as a novel probe for uncovering superspin-glass-like behavior above room temperature in the Ni/MoS 2 nanostructure, which also exhibits a collective ferromagnetic state at very low temperatures, reminiscent of superferromagnetism.
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页数:9
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