Growth of dual-phase high entropy alloy films using thermal vapor deposition

被引:0
|
作者
Dehury, Ranjit Kumar [1 ,2 ]
Gautam, Abhay [1 ]
Behera, Rakesh [1 ]
Rashid, Abira [1 ]
Bapat, Rudheer [3 ]
Paliwal, Manas [4 ]
机构
[1] Indian Inst Technol Gandhinagar, Dept Mat Engn, Gandhinagar 382055, Gujarat, India
[2] P P Savani Univ, Sch Engn, Surat 394125, India
[3] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Homi Bhabha Rd, Mumbai 400005, India
[4] Indian Inst Technol Kharagpur, Dept Met & Mat Engn, Kharagpur 721302, India
关键词
Thin films; Amorphous; Dual -phase alloy; Epitaxy; Physical vapor deposition; High entropy alloy; MICROSTRUCTURE; COATINGS; DESIGN;
D O I
10.1016/j.matchar.2024.113998
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, physical vapor deposition was used to grow dual-phase high entropy alloy films. The near equiatomic films of CoCrFeMnNi were grown on a freshly cleaved (100) surface of a NaCl substrate. The deposition was carried out at a substrate temperature ranging from -143 degrees C to 600 degrees C. The films grown at cryogenic temperatures were completely amorphous while dual- phase microstructure was observed in films grown at room temperature and above. The dual phase consisted of an amorphous and a crystalline domain when grown at room temperature. However, for growth temperatures of 200 degrees C and above the dual-phase microstructure consisted of compositionally equivalent fcc and hcp phases. In a narrow temperate range of 400-450 degrees C a partial epitaxy appeared, suggesting the possibility of growing crystallographically oriented films of the high entropy alloys under more refined growth conditions.
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页数:8
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