Noncontact Characterization of Carrier Mobility in Long-Wave Infrared HgCdTe Films With Terahertz Time-Domain Spectroscopy

被引：0

作者：

Refvik, Nils B. ^{[1
]}

Jensen, Charles E. ^{[1
]}

Purschke, David N. ^{[2
]}

Pan, Wenwu ^{[3
]}

Simpson, Howe R. J. ^{[1
]}

Lei, Wen ^{[3
]}

Gu, Renjie ^{[3
]}

Antoszewski, Jarek ^{[3
]}

Umana-Membreno, Gilberto A. ^{[3
]}

Faraone, Lorenzo ^{[3
]}

Hegmann, Frank A. ^{[1
]}

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2E1, Canada

[2] Natl Res Council Canada & Univ Ottawa, Joint Attosecond Sci Lab, Ottawa, ON K1N 5A2, Canada

[3] Univ Western Australia, Dept Elect Elect & Comp Engn, ARC CoE Transformat Meta Opt Syst, Perth, WA 6009, Australia

来源：

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | 2024年 / 14卷 / 04期

基金：

澳大利亚研究理事会; 加拿大自然科学与工程研究理事会; 加拿大创新基金会;

关键词：

Mercury (metals); Temperature measurement; Zinc; Terahertz communications; Dielectrics; Dielectric measurement; Substrates; II-VI semiconductor materials; charge carrier processes; conductivity measurement; terahertz time-domain spectroscopy (THz-TDS); ENERGY-GAP; ABSORPTION; TEMPERATURE; RADIATION; FERMIONS; MODES;

D O I：

10.1109/TTHZ.2024.3393627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We use terahertz time-domain spectroscopy to measure the complex dielectric function of long-wave infrared Hg1-xCdxTe films (x = 0.18, 0.20, 0.22) as a function of temperature in a noncontact manner. Using a Drude-Lorentz model fit to the measured complex transmission function combined with a Kane model description of the band structure, we obtain the temperature-dependent conduction band carrier density, effective mass, scattering time, and carrier mobility for all three Hg1-xCdxTe films. The optical properties of a bare substrate of Cd0.96Zn0.04Te were also measured in the terahertz region. The high quality of the Hg1-xCdxTe films is demonstrated by ultrahigh mobilities exceeding 10(5) cm(2)V(-1)s(-1) and ionized donor densities less than 3 x 10(15) cm(-3) at temperatures below 100 K.

引用

页码：466 / 475

页数：10

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