Metal-insulator transition in type II heterostructures based on transition metal dichalcogenides

被引：1

作者：

Ratnikov, Pavel V. ^{[1
]}

机构：

[1] Russian Acad Sci, Prokhorov Gen Phys Inst, Vavilova St 38, Moscow 119991, Russia

来源：

PHYSICS LETTERS A | 2024年 / 517卷

关键词：

Metal-insulator transition; Transition metal dichalcogenides; Type II heterostructures; Interlayer excitons; ELECTRON-HOLE LIQUID;

D O I：

10.1016/j.physleta.2024.129661

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The problem of screening the Coulomb interaction between charge carriers in type II heterostructures based on transition metal dichalcogenides is analytically solved. At a sufficiently high density of charge carriers, the density dependence of the interlayer exciton energy is obtained. The energy of the interlayer exciton tends to zero in the metal-insulator transition point. The presented scheme of calculations makes it possible to find the temperature dependence of the density of this transition.

引用

页数：7

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