All-Silicon Polarization-Insensitive Metamaterial Absorber in the Terahertz Range

被引:5
|
作者
Xu, Zongcheng [1 ]
Li, Yujie [1 ]
Han, Bin [1 ]
Wang, Yue [1 ]
Yuan, Quan [1 ]
Li, Yanan [1 ]
He, Weiyan [1 ]
Hao, Junhua [1 ]
Wu, Liang [2 ]
Yao, Jianquan [2 ]
机构
[1] Tianjin Renai Coll, Dept Phys, Tianjin 301636, Peoples R China
[2] Tianjin Univ, Inst Laser & Optoelect, Key Lab Optoelect Informat Sci & Technol, Minist Educ, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
terahertz; all-dielectric; broadband absorption; diffraction; ULTRA-BROAD-BAND; DESIGN; METASURFACE;
D O I
10.3390/ma17092098
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
All-silicon terahertz absorbers have attracted considerable interest. We present a design and numerical study of an all-silicon polarization-insensitive terahertz metamaterial absorber. The meta-atoms of the metamaterial absorber are square silicon rings which can be viewed as gratings. By properly optimizing the structure of the meta-atom, we achieve a broadband absorptivity that is above 90% ranging from 0.77 THz to 2.53 THz, with a relative bandwidth of 106.7%. Impedance matching reduces the reflection of the terahertz waves and the (0, +/- 1)-order diffraction induce the strong absorption. The absorption of this absorber is insensitive to the polarization of the terahertz wave and has a large incident angle tolerance of up to 60 degrees. The all-silicon metamaterial absorber proposed here provides an effective way to obtain broadband absorption in the terahertz regime. Metamaterial absorbers have outstanding applications in terahertz communication and imaging.
引用
收藏
页数:11
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